IXXX160N65B4 Discrete Semiconductor Products

Series:	GenX4™, XPT™
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	310A
Current - Collector Pulsed (Icm):	860A
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 160A
Power - Max:	940W
Switching Energy:	3.3mJ (on), 1.88mJ (off)
Input Type:	Standard
Gate Charge:	425nC
Td (on/off) @ 25°C:	52ns/220ns
Test Condition:	400V, 80A, 1 Ohm, 15V
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PLUS247™-3
Base Part Number:	160N65

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Introduction to IXXX160N65B4

The IXXX160N65B4 is a single IGBT block manufactured by Infineon Technologies, known as one of the world’s leading semiconductor companies. IGBTS are an important type of power transistor, allowing for high-current, low-voltage and high-switching frequencies. This device is a modern variation of the older bipolar transistor, combining both the advantages of transistors and the relatively low cost of power transistors.

What is IGBT?

IGBT stands for Insulated-Gate-Bipolar-Transistor—a type of power transistor that combines the advantages of a bipolar transistor anda field-effect transistor (FET). In particular, their performance for heavy duty electrical loadswas greatly improved—allowing for the manufacture of highly compact and efficient electronicmodules and components.

Features of the IXXX160N65B4

The IXXX160N65B4 module has a maximum collector current rating of 160A and a forward blocking voltage of 650V. It is made of an insulated substrate, which stands for the highest isolation voltage and highest thermal performance. It contains a power converter for optimal operation and is designed to allow for smooth operation. Thus, it takes up less space and reduces operational costs.

IXXX160N65B4 Application Field

The IXXX160N65B4 IGBT is most commonly used in power switching applications. It can be used in multiple applications including solar power inverters, wind turbines, switch-mode power supplies, and increased sports products. Its high-current, low-voltage, and high-switching frequencies are suitable for applications that require a high level of switching accuracy, such as in a medical MRI machine.

Working Principles of IXXX160N65B4

The working principle of the IXXX160N65B4 is simple. It works by providing a gate signal to the device. This gate signal is used to control the on and off state of the device by controlling the flow of electrons between the collector and the emitter. The output voltage is then determined by the difference between the collector and the emitter. When the gate signal is applied, a majority carrier (electrons) will be created beneath the gate. This will cause a depletion region to form in the base of the device, inhibiting the flow of electrons between the collector and the emitter. When the gate signal is removed, the depletion region will disappear, allowing the electrons to flow between the emitter and the collector, allowing the voltage to drop.

Conclusion

The IXXX160N65B4 is a single IGBT device that is well-suited to power switching applications. It provides a maximum current rating of 160A and a blocking voltage rating of 650V. It is designed to take up less space and reduce operational costs, as well as provide high-current, low-voltage, and high-switching frequencies. Its working principle is based on controlling the flow of electrons between the collector and the emitter. This makes the IXXX160N65B4 a very reliable and efficient power transistor, with applications in many different fields.

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