IXXX200N60B3 Discrete Semiconductor Products

Input Type:	Standard
Supplier Device Package:	PLUS247™-3
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	100ns
Test Condition:	360V, 100A, 1 Ohm, 15V
Td (on/off) @ 25°C:	48ns/160ns
Gate Charge:	315nC
Series:	XPT™, GenX3™
Switching Energy:	2.85mJ (on), 4.4mJ (off)
Power - Max:	1630W
Vce(on) (Max) @ Vge, Ic:	1.7V @ 15V, 100A
Current - Collector Pulsed (Icm):	900A
Current - Collector (Ic) (Max):	380A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Part Status:	Active

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IXXX200N60B3 Application Field and Working Principle

Insulated gate bipolar transistors, or IGBTs, are becoming increasingly popular as power switching devices, due to their superior performance compared to other transistors such as bipolar junction transistors. amongst them,the IXXX200N60B3 stands out for its combination of high current and low on-state voltage drop, making it an ideal choice for applications such as inverters, motor control, and various other power conversion applications. In this article,we will discuss the application field and working principle of the IXXX200N60B3 IGBT.

Application Field:

The IXXX200N60B3 is a single IGBT that is able to handle currents up to 200 Amps at a voltage drop of 60V. It is primarily used in motor control and power conversion applications, and is also used in UPS systems and other current-limiting applications. It is often used in combination with a range of other power components, such as diodes, resistors, and capacitors, to form complex power solutions.The IXXX200N60B3 is an important component in many industrial applications. It is especially suitable for applications with high currents and low voltage drops. In many cases, this makes it an ideal choice for power electronics applications where low losses are important.The IXXX200N60B3 is also used in wiring applications. In these cases, it is often used as a replacement for traditional transistors, due to its superior performance.

Working Principle:

The IXXX200N60B3 is a single IGBT that works on the principle of two p-n junctions connected together in series, with the gate terminal of the transistor connecting to the gate of the device. This configuration gives the device the ability to switch high currents at low voltage drops.When the gate of the IXXX200N60B3 is brought to a low voltage potential, the negative potential at the gate attracts the extra electrons from the p-n junction and hence, turns it off. When the gate is brought to a positive potential, the positive potential will attract the electrons in the p-n junction and, therefore, switch on the device.This process is termed as turn-on or turn-off, which is what enables the IXXX200N60B3 to switch large currents at low voltage drops. This makes it an extremely versatile device that can be used for a wide range of applications.In conclusion, the IXXX200N60B3 is an incredibly adaptable IGBT that can be used in a wide range of applications, from motor control and power conversion to wiring applications. Its capacity to handle large currents at low voltage drops makes it an ideal choice for many applications. Finally, its ability to be switched on and off easily also makes it one of the most popular IGBTs currently on the market.

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