
IXXX140N65B4H1 Discrete Semiconductor Products |
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Allicdata Part #: | IXXX140N65B4H1-ND |
Manufacturer Part#: |
IXXX140N65B4H1 |
Price: | $ 9.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT |
More Detail: | IGBT 650V 340A 1200W Through Hole PLUS247™-3 |
DataSheet: | ![]() |
Quantity: | 1000 |
30 +: | $ 8.23599 |
Input Type: | Standard |
Supplier Device Package: | PLUS247™-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 105ns |
Test Condition: | 400V, 100A, 4.7 Ohm, 15V |
Td (on/off) @ 25°C: | 54ns/270ns |
Gate Charge: | 250nC |
Series: | XPT™, GenX4™ |
Switching Energy: | 5.75mJ (on), 2.67mJ (off) |
Power - Max: | 1200W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 120A |
Current - Collector Pulsed (Icm): | 840A |
Current - Collector (Ic) (Max): | 340A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | -- |
Part Status: | Active |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IXXX140N65B4H1 is an insulated-gate bipolar transistor (IGBT) module suitable for a wide range of applications such as motor control, power supplies, UPS systems, and high-power utility applications. This IGBT module is part of the Insulated Gate Bipolar Transistor (IGBT) family which offers superior performance, simplifies system design, and reduces power consumption.
As one of the most modern solid-state components, the IXXX140N65B4H1 offers a range of features that make it ideal for the demanding requirements of today\'s electrical systems. With its enhanced current rating, design flexibility, and low power loss, this IGBT module is well-suited for applications such as motor control, UPS systems, power supplies, and power utility systems.
The IXXX140N65B4H1 also provides reliable protection against short-circuits and other faults. Its built-in protection circuitry prevents device failure due to overvoltage, thermal runaway, current surge, or over-temperature conditions. This ensures maximum reliability, even in the most demanding applications.
The IXXX140N65B4H1 uses a three-port fully-isolated structure that eliminates the need for external electronic components. This makes it compact and easy to use, while providing superior performance and increased efficiency. The IGBT module also features a low-loss, low-inductance planar-magnetic structure that helps reduce power consumption, making it ideal for a variety of applications.
The IXXX140N65B4H1’s working principle involves the manipulation of a conducting path between its two electrodes. This is accomplished by applying an electric field across the gallium-nitride layer semiconductor junction that lies between the two terminals. When electric current passes through the junction, it creates a voltage drop across the junction and this electric field regulates the current flow.
When the switch is opened, the current is switched off, and the junction is in an open-circuit configuration. This means there is no electric field across the junction, so no electric current can flow. At the same time, the built-in protection circuitry is activated, providing reliable protection against short-circuits, overvoltage, and other faults.
The IXXX140N65B4H1’s fast switching speeds and high current-handling capabilities make it ideal for power applications, such as motor control, power supplies, and UPS systems. Its low power loss and built-in protection features also make it well-suited for high-power utility applications. The IGBT module is designed for install and replace applications, making it a great choice for system designers looking for a reliable, easy-to-use component.
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