IXXX160N65C4

Switching Energy:	3.5mJ (on), 1.3mJ (off)
Base Part Number:	160N65
Supplier Device Package:	PLUS247™-3
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Test Condition:	400V, 80A, 1 Ohm, 15V
Td (on/off) @ 25°C:	52ns/197ns
Gate Charge:	422nC
Input Type:	Standard
Series:	GenX4™, XPT™
Power - Max:	940W
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 160A
Current - Collector Pulsed (Icm):	800A
Current - Collector (Ic) (Max):	290A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	PT
Part Status:	Active
Packaging:	Tube

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Introduction

IXXX160N65C4 is a single IGBT (Insulated Gate Bipolar Transistor) designed by International Rectifier, a product line of Infineon Technologies. It is a type of transistor that combines the advantages of both of field-effect transistors (FETs) and bipolar junction transistors (BJTs). It is commonly used in the field of industrial and consumer electronics, as well as in automotive and power supplies. This article will discuss the application field and working principle of the IXXX160N65C4.

Application Field

The IXXX160N65C4 has a range of applications in industry, consumer electronics and automotive control systems. In industry, it can be used to control current flow in high voltage circuits and can be used in electronic switching. It is often found in appliances, machines and industrial robots, where it can be used for high-frequency switching and to provide an electrical isolator between high voltage and low voltage circuits.In the automotive industry, IXXX160N65C4 can be used to switch loads on and off, such as amplifiers and engine controllers. It can also be used to control the speed of electric motors, including in electric and hybrid vehicles.In consumer electronic applications, the IXXX160N65C4 can be used to switch loads in various devices, including computers, DVD and Blu-ray players, and televisions. It is also commonly used in audio amplifiers, allowing for high-frequency switching and expansion of sound.

Working Principle

The working principle of the IXXX160N65C4 can be broken down into five steps, which are:

• Deactivation: In this step, the emitter-base junction of the device is reversed biased, blocking current flow between the collector and base.
• Isolation: Next, the gate voltage is set higher than the emitter voltage, effectively isolating the collector and base from the gate.
• Activation: Now, the gate voltage of the device is lowered to a level where the collector voltage can be greater than the base voltage. This sets up the conditions for current to flow between the collector and base.
• Conduction: With the gate voltage set to the correct level, the current can flow from the collector to the base.
• Deactivation: Finally, the gate voltage is set back to the same level as the emitter voltage and the transistor is switched off.

The combination of these steps is what allows the IXXX160N65C4 to be used as a high-frequency switch in the various applications mentioned above.

Conclusion

The IXXX160N65C4 is a single IGBT that is used in a variety of industries and applications. It offers the advantages of both FETs and BJTs, allowing it to be used as a high-frequency switch. It has a variety of applications in industry, consumer electronics, and automotive control systems. Its working principle can be broken down into five steps, allowing for the efficient control of current flow.

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