J112-D26Z Discrete Semiconductor Products |
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Allicdata Part #: | J112-D26ZTR-ND |
Manufacturer Part#: |
J112-D26Z |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 35V 625MW TO92 |
More Detail: | JFET N-Channel 35V 625mW Through Hole TO-92-3 |
DataSheet: | J112-D26Z Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.06729 |
Resistance - RDS(On): | 50 Ohms |
Power - Max: | 625mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | J112 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 35V |
Current - Drain (Idss) @ Vds (Vgs=0): | 5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 1V @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
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J112-D26Z is a type of Junction Field Effect Transistor (JFET). It is a three-terminal semiconductor device that is designed to operate as a voltage-controlled electrical switch or current controller. The control of the behavior of a JFET depends upon the voltage applied to a gate terminal. JFETs are distinct from Bipolar Junction Transistors (BJTs) in that it is a unipolar transistor, and sometimes referred to as a "self-controlled field-effect transistor".
J112-D26Z transistors are small electronic components designed for a wide range of applications. Common uses for the J112-D26Z include RF oscillators and amplifiers and audio amplifiers. It is preferred over traditional BJTs because of its superior characteristics and superior performance in most applications. The J112-D26Z also has some unique features such as its small size, high input impedance, low transconductance and low noise level.
J112-D26Z transistors have a two-terminal base (gate and drain) structure, with a single gate electrode connected to the source of the device. The source and the drain are connected internally and form a channel between them. This channel determines the current flow through the device, and this current flow is controlled by the voltage applied to the gate electrode. The gate electrode has a lower potential than the source and drain, thus generating an electric field which controls the current flow.
The working principle of the J112-D26Z can be illustrated by means of an example. Suppose a voltage VGS is applied to the gate electrode of the device. This action creates an electric field that operates in a plane perpendicular to the plane of the channel. This electric field exerts an influence on the charges in the channel and prevents them from moving. Because these charges are not free to move, the current flow through the channel is reduced and the output voltage is reduced. This is why J112-D26Z transistors can be used to create voltage dividers and voltage regulators.
Aside from being used as a voltage regulator, J112-D26Z transistors can also be used for signal conditioning, signal amplification, and as switches for controlling high current and power applications. J112-D26Z transistors also have the advantage of being relatively simple devices compared to other transistors and integrated circuits, which makes them easy to integrate into circuits. Other applications for J112-D26Z transistors include power management and switching, analogue signal conditioning, and video output.
Overall, J112-D26Z transistors are highly versatile devices that can be used in a variety of applications. Their capability of controlling current without relying on a power source makes them attractive for use in applications where power saving and low noise levels are important. In addition, the simple two-terminal structure of the J112-D26Z makes it easy to integrate into existing circuits. All of these factors make the J112-D26Z a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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J112 | ON Semicondu... | -- | 3565 | JFET N-CH 35V 625MW TO92J... |
J112-D74Z | ON Semicondu... | -- | 1000 | JFET N-CH 35V 625MW TO92J... |
J112-D27Z | ON Semicondu... | 0.07 $ | 1000 | JFET N-CH 35V 625MW TO92J... |
J112-D26Z | ON Semicondu... | 0.08 $ | 1000 | JFET N-CH 35V 625MW TO92J... |
J112,126 | NXP USA Inc | 0.0 $ | 1000 | JFET N-CH 40V 400MW TO92-... |
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