J112RLRAG Discrete Semiconductor Products |
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Allicdata Part #: | J112RLRAGOSTR-ND |
Manufacturer Part#: |
J112RLRAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 35V 0.35W TO92 |
More Detail: | JFET N-Channel 35V 350mW Through Hole TO-92-3 |
DataSheet: | J112RLRAG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 35V |
Current - Drain (Idss) @ Vds (Vgs=0): | 5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 1V @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Resistance - RDS(On): | 50 Ohms |
Power - Max: | 350mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | J112 |
Description
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<div><h3>Transistors - JFETs</h3><p>J112RLRAG is a type of junction field-effect transistors (JFETS), most commonly used as an amplifier or switch. The device is generally composed of two terminals (the source and drain) and one gate that controls the current flow between the source and drain depending on the voltage applied to the gate. J112RLRAG transistors operate as a voltage-controlled resistor.</p><p>When a voltage is applied to the gate terminal, the electrical charge stored at the gate controls the width of the conductive channel between the source and drain. This action works on the principle of electrostatic attraction, giving JFETs a higher impedance than their metal-oxide semiconductor (MOS) FET counterparts.</p><p>J112RLRAG is widely used as a low noise amplifier due to its low intrinsic capacitance between the gate and source. As a result, the source capacitance is only approximately one-tenth that of a MOSFET, similar in design. The low intrinsic capacitance also makes J112RLRAG FETs suitable for high-frequency applications as it causes less signal attenuation as compared to MOSFETs.</p><p>Moreover, J112RLRAG FETs lack of a body diode, making them suitable for use in higher voltage circuits. This is because the body diode of the transistor provides a low current path between the source and drain, which can cause significant leakage in high voltage circuits.</p><p>Furthermore, J112RLRAG FETs are known for their exceptional linearity and low distortion, making them ideal for audio, video and telecoms applications. For example they can be used as low noise amplifiers in video transmissions and as voltage-controlled resistors in tone control circuits.</p><p>Overall, J112RLRAG transistors are versatile devices ideal for low-voltage, low-current applications such as amplifiers, switches, and voltage-controlled resistors. Their high linearity and low distortion make them particularly well-suited for audio and video applications.</p></div>The specific data is subject to PDF, and the above content is for reference
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