Allicdata Part #: | J112GOS-ND |
Manufacturer Part#: |
J112G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 35V 0.35W TO92 |
More Detail: | JFET N-Channel 35V 350mW Through Hole TO-92-3 |
DataSheet: | J112G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 35V |
Current - Drain (Idss) @ Vds (Vgs=0): | 5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 1V @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Resistance - RDS(On): | 50 Ohms |
Power - Max: | 350mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | J112 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
J112G is a kind of junction field-effect transistor (JFET) integrated circuit produced from Microsemi. It is a low-power N-channel regulated-cascode MOSFET (metal oxide semiconductor field-effect transistor) which can provide high performance in a range of applications. J112G mainly works through a process of electric-charge control to obtain a strong power output with low power consumption. Through this electric charge control and low power consumption, J112G can be found in a variety of applications such as automotive communication systems, healthcare, communications and industrial applications.
The primary working principle of J112G is that the internal electric fields control the flow of electric current, allowing it to achieve very high levels of power gain with low power consumption. In J112G, this electric field is formed by two metal gates, which are connected to a common substrate. The voltage in one gate creates a potential difference between the two gates, which controls the flow of electric current between them. This creates a typical voltage/current relationship, where the voltage applied to a gate is proportional to the current flowing through it. The voltage/current relationship is adjusted using a multi-level FET cascode structure, which ensures a maximum current gain in applications.
In terms of application fields, J112G is designed to operate in a wide range of requirements including automotive, medical, industrial, consumer technology and wireless communications. For example, it can be used in automotive applications such as fuel injection, alternator controls and transmission control systems. Moreover, J112G is ideal for use in medical applications including cardiac pacemaker and defibrillator systems due to its high power output and low power usage. Additionally, J112G can be deployed in consumer technology, such as connected home products, due to its low power consumption.
J112G can also be used for industrial systems such as motor controls, power supplies, as well as systems for appliances, machine tools and factory automation. Additionally, it is ideal for use in wireless communications applications as it can ensure a high power output with low power consumption. Furthermore, J112G is also compatible with a wide range of technology standards and protocols, including Bluetooth low energy (BLE), Wi-Fi, ZigBee, Z-Wave and others.
J112G has a variety of strengths including its power efficiency, small size, high temperature stability and compatibility with a range of standards and protocols. These features give J112G the ability to be used in a variety of applications, from automotive to healthcare and home applications. Finally, J112G provides a cost-effective solution for many companies due to its low power consumption, low price, and small size.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
J112 | ON Semicondu... | -- | 3565 | JFET N-CH 35V 625MW TO92J... |
J112-D74Z | ON Semicondu... | -- | 1000 | JFET N-CH 35V 625MW TO92J... |
J112-D27Z | ON Semicondu... | 0.07 $ | 1000 | JFET N-CH 35V 625MW TO92J... |
J112-D26Z | ON Semicondu... | 0.08 $ | 1000 | JFET N-CH 35V 625MW TO92J... |
J112,126 | NXP USA Inc | 0.0 $ | 1000 | JFET N-CH 40V 400MW TO92-... |
J112_D11Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 625MW TO92J... |
J112G | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 0.35W TO92J... |
J112RL1 | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 0.35W TO92J... |
J112RL1G | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 0.35W TO92J... |
J112RLRA | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 0.35W TO92J... |
J112RLRAG | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 0.35W TO92J... |
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