Allicdata Part #: | J112,126-ND |
Manufacturer Part#: |
J112,126 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | JFET N-CH 40V 400MW TO92-3 |
More Detail: | JFET N-Channel 40V 400mW Through Hole TO-92-3 |
DataSheet: | J112,126 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Drain to Source Voltage (Vdss): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 1V @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | 6pF @ 10V (VGS) |
Resistance - RDS(On): | 50 Ohms |
Power - Max: | 400mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | J112 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
J112, J116, and J126 transistors are a type of junction field-effect transistors (JFETs). They have several benefits over bipolar junction transistors (BJTs), but are more complicated to manufacture. These transistors are commonly used in amplifiers, analog switches, and voltage regulators.
The JFET is similar to the BJT in that it is a four-terminal device with one terminal acting as the gate and the other three acting as the source, drain, and substrate. The main difference between the two types of transistors is the way in which the current flow is controlled. In the BJT, current flow is controlled by the base current, which modifies the potential barrier between the collector and emitter. Conversely, current flow in the JFET is controlled by a reverse-biased depletion region formed between the gate and the substrate. The depletion region acts as a resistive element and modifies the current flow between the drain and the source.
J112, J116, and J126 transistors have several major advantages over BJTs. They are three-lead devices, which means that they can be wired differently than BJTs, making them more versatile for certain applications. These transistors are also better suited for high-impedance inputs and lower noise outputs. Additionally, JFETs are usually cheaper to manufacture. One major drawback of these transistors is their relatively low current gain, which can make them more difficult to use in higher-power level applications.
The working principle of J112, J116, and J126 transistors is similar to that of other JFETs. In a JFET, the gate-source voltage modulates the potential barrier between the drain and the source. The width of the depletion region increases or decreases depending on the gate voltage, thus decreasing or increasing the drain-source resistance. The drain current is then determined by the drain-source voltage across the resistor, and is further modulated by the gate-source voltage. As the drain voltage changes, the gate-source voltage must be adjusted to keep the drain current constant.
J112, J116, and J126 transistors are a type of three-lead junction field-effect transistor that offers several advantages over bipolar junction transistors. They have lower noise output, higher impedance inputs, and simpler wiring configurations. Their working principle is based on the reverse-biased depletion region between the gate and the substrate, which modulates the drain-source current. Despite their advantages, these transistors have relatively low current gain and are more expensive to manufacture, making them better suited for certain applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
J112 | ON Semicondu... | -- | 3565 | JFET N-CH 35V 625MW TO92J... |
J112-D74Z | ON Semicondu... | -- | 1000 | JFET N-CH 35V 625MW TO92J... |
J112-D27Z | ON Semicondu... | 0.07 $ | 1000 | JFET N-CH 35V 625MW TO92J... |
J112-D26Z | ON Semicondu... | 0.08 $ | 1000 | JFET N-CH 35V 625MW TO92J... |
J112,126 | NXP USA Inc | 0.0 $ | 1000 | JFET N-CH 40V 400MW TO92-... |
J112_D11Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 625MW TO92J... |
J112G | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 0.35W TO92J... |
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J112RL1G | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 0.35W TO92J... |
J112RLRA | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 0.35W TO92J... |
J112RLRAG | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 0.35W TO92J... |
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