J112 Discrete Semiconductor Products |
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Allicdata Part #: | J112FS-ND |
Manufacturer Part#: |
J112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 35V 625MW TO92 |
More Detail: | JFET N-Channel 35V 625mW Through Hole TO-92-3 |
DataSheet: | J112 Datasheet/PDF |
Quantity: | 3565 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 35V |
Current - Drain (Idss) @ Vds (Vgs=0): | 5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 1V @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Resistance - RDS(On): | 50 Ohms |
Power - Max: | 625mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | J112 |
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The J112 is a low power field-effect transistor commonly referred to as a JFET. It is an essential component in many applications, often used in switches, detectors, and amplifiers. It is an example of an unipolar device, meaning it requires only a single polarity of voltage to operate. In this article we\'ll explain the application fields and working principle of the J112.
Application Fields
Due to its low power consumption, the J112 is well suited for many applications in the electronics industry. It\'s often used in signal-processing circuits, measuring instruments, audio amplification, and power regulation. It can also be used as a voltage regulator, due to its ability to maintain a constant output voltage regardless of the input current.
The J112 is commonly used in RF, or radio frequency, electronics. It can be used to create transistors that are especially sensitive to radio signals. It is also used in digital circuits and amplifiers where noise reduction and low power consumption is needed.
The J112 is also a very reliable component, with high levels of performance and low failure rates. This makes it a popular choice for use in high-end medical and aerospace circuits.
Working Principle
The J112 is a three-terminal device that works using the principle of electrical charge control and depletion. This means that the flow of electrons can be controlled and manipulated by applying a voltage across the device.
At the heart of the J112 is a channel made of n-type silicon. When the gate terminal is given a positive voltage, it attracts electrons and creates an electron rich area that is known as an enhancement region. This region helps the flow of electrons through the channel, making the device conductive.
When the gate voltage is reversed the electron attraction is weakened, creating a depletion region and inhibiting the flow of electrons. This is how the device is able to control and regulate the flow of current into and out of the device.
The J112 is a very versatile device because it can conduct current in both directions when the gate voltage is adjusted. This makes it extremely useful for a variety of applications.
The ability of the J112 to maintain a constant output voltage regardless of the input current makes it an even more attractive choice for power regulation applications. By manipulating the gate voltage, a user can ensure that the desired voltage is applied to the output. This ability also makes the J112 an ideal choice for voltage-variable resistors.
The J112 is a powerful and versatile device that can be used in a wide range of applications. It has low power consumption, low failure rates, and can provide precise control over the flow of current. This makes it an attractive choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
J112 | ON Semicondu... | -- | 3565 | JFET N-CH 35V 625MW TO92J... |
J112-D74Z | ON Semicondu... | -- | 1000 | JFET N-CH 35V 625MW TO92J... |
J112-D27Z | ON Semicondu... | 0.07 $ | 1000 | JFET N-CH 35V 625MW TO92J... |
J112-D26Z | ON Semicondu... | 0.08 $ | 1000 | JFET N-CH 35V 625MW TO92J... |
J112,126 | NXP USA Inc | 0.0 $ | 1000 | JFET N-CH 40V 400MW TO92-... |
J112_D11Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 625MW TO92J... |
J112G | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 0.35W TO92J... |
J112RL1 | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 0.35W TO92J... |
J112RL1G | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 0.35W TO92J... |
J112RLRA | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 0.35W TO92J... |
J112RLRAG | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 35V 0.35W TO92J... |
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