Allicdata Part #: | J310_D26Z-ND |
Manufacturer Part#: |
J310_D26Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 60MA TO92 |
More Detail: | RF Mosfet N-Channel JFET 10V 10mA 450MHz 12dB TO-... |
DataSheet: | J310_D26Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel JFET |
Frequency: | 450MHz |
Gain: | 12dB |
Voltage - Test: | 10V |
Current Rating: | 60mA |
Noise Figure: | 3dB |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 25V |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | J310 |
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J310_D26Z is an enhancement-type field-effect transistor that exhibits improved and reliable characteristics for use in RF amplifiers. The device is a monolithic integrated circuit that is fabricated with an epitaxial-base N-channel depletion-mode junction.
The J310_D26Z is a versatile device with a wide range of applications, such as radio frequency (RF), microwave, and amplifying circuits, as well as other switching applications. The device is ideal for amplifying, switching, or controlling signals in a variety of commercial, industrial, and consumer electronics devices.
The J310_D26Z is designed to be used in RF amplifiers and other high-speed switching applications. The device is designed to provide high gain, high frequency, and a low differential noise figure. The combination of these characteristics make the J310_D26Z suitable for use in a variety of circuits, from simple RF amplifiers to sophisticated control and switching circuits.
The working principle of the J310_D26Z is based on the field effect transistor (FET). FETs are three-terminal devices, with source, drain and gate electrodes. Gate voltage is used to control current between the source and the drain, thus controlling the conduction of the device. This control voltage can be the output of an amplifier, a logic gate, or even a digital signal processor.
The J310_D26Z is constructed using metal-oxide-semiconductor field-effect transistors (MOSFETs). The gates of the devices are connected to each other and to the source of the device, creating a self-contained circuit. The source-drain current flows when the gate voltage exceeds the threshold voltage, which is determined by the device characteristics.
The device also features a reverse bias protection feature. This protection feature prevents the device from being damaged when the gate voltage exceeds the threshold voltage. The protection feature will automatically stop the device from operating and reset itself, protecting the other devices connected to it.
The J310_D26Z has a high imbalance between the gate and source voltages, making it well suited for use in amplifiers and other switching applications. The device also features high-frequency operation and a fast response time, making it suitable for use in high-speed switching applications.
The J310_D26Z is a versatile device that is suitable for a wide range of RF, microwave, and amplifying circuits, as well as other switch applications. Its combination of features, such as high gain, low differential noise figure, high frequency operation, and fast response time, makes it an excellent choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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