J310_D27Z

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	N-Channel JFET
Frequency:	450MHz
Gain:	12dB
Voltage - Test:	10V
Current Rating:	60mA
Noise Figure:	3dB
Current - Test:	10mA
Power - Output:	--
Voltage - Rated:	25V
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	J310

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J310_D27Z Application Field and Working Principle

The J310_D27Z is a type of N-Channel field effect transistor (FET) specifically designed for use in RF (radio frequency) applications. It has an ultra-low voltage rating and an ultra-low power rating, making it one of the most popular N-Channel FETs used today. The key features that make this FET so well-suited for RF applications include its low capacitance and resistance, high-frequency operation, and low-power dissipation.The principle behind the J310_D27Z FET is an electric field which controls the flow of electrical charge through a channel between the two electrodes (drain and source). The driving voltage applied to the gate electrode causes a change in the electric field in the channel and thereby controlling the conductivity of the channel between the two electrodes. As the drain voltage increases, the current flowing through the channel increases, thereby switching the FET on. The J310_D27Z has a high-frequency capability with a drain-source breakdown voltage of -10V. This is ideal for RF applications such as AM/FM transmitters, cellular base stations, WiFi routers, and Bluetooth applications. Due to its low capacitance and resistance, this FET is also incredibly well-suited for high frequency-switching applications. It has a maximum switching speed of 100 nanoseconds and a maximum frequency of 10MHz. The J310_D27Z is a popular choice for RF components due to its low power consumption and thermal characteristics. The maximum drain leakage current is quite low, which makes it suitable for low-power applications. Additionally, the temperature coefficient of the on-resistance is very low, making it ideal for use in high-temperature conditions. The FET is rated for a maximum operating temperature of 175℃. When designing circuits for use with the J310_D27Z, it is important to consider the total power dissipation of the circuit. Due to its ultra-low power rating, the J310_D27Z poses a risk of thermal runaway if too much power is applied. It is also important to ensure that rated values for the gate-source voltage, drain-source voltage, and power disipation are not exceeded. In short, the J310_D27Z is an ultra-low voltage, ultra-low power N-Channel FET specifically designed for use in RF applications. Its low capacitance and resistance, high-frequency operation, and low power-dissipation make it an ideal choice for high-frequency switching, radio transmitters, and cellular base stations. Like other FETs, it is necessary to design circuits carefully to ensure rated values for the gate-source voltage, drain-source voltage, and power dissipation are not exceeded.

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