Allicdata Part #: | J310RLRP-ND |
Manufacturer Part#: |
J310RLRP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 60MA TO92 |
More Detail: | RF Mosfet N-Channel JFET 10V 10mA 100MHz 16dB TO-... |
DataSheet: | J310RLRP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel JFET |
Frequency: | 100MHz |
Gain: | 16dB |
Voltage - Test: | 10V |
Current Rating: | 60mA |
Noise Figure: | -- |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 25V |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | J310 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Discrete field-effect transistors (FETs) are one of the most established technology for RF applications. They enable the efficient control of RF energy for various purposes. Specifically, J310RLRP is a discrete FET available with the RF performance most suited for cellular and other basestation applications. This article is going to discuss the application field and working principle of J310RLRP.
The J310RLRP is a depletion mode JFET designed primarily as an RF front-end switch. Typically it is used to switch a signal path between two different states. It is able to provide a low input capacitance and a high input impedance, making it suitable for high frequency switching applications. This makes it an ideal choice for use in amplifying, modulating and switching in basestation design. Furthermore, it has a very high blocking voltage, which makes it capable of biasing both the gate and drain for maximum performance.
The operating principles of J310RLRP is simple and can be explained by examining the basics of a field-effect transistor. A FET is made up of a source, drain and gate, which are all connected together. When a voltage is applied to the gate, this voltage creates an electrical field which causes electrons to flow from the source to the drain. This flow of electrons is referred to as the drain current, and it is this current that is used to control the power output of a FET. The J310RLRP is designed to allow a high drain current while maintaining an extremely low input capacitance. This makes it ideal for RF applications.
The RF performance of J310RLRP is outstanding compared to other FETs. It has an exceptionally low noise figure, which makes it particularly useful for applications where signal quality must be maintained. Additionally, its low capacitance gives it an enhanced power-handling capability, which is necessary for efficient operation. The high blocking voltage of the device also gives it additional capability to handle higher bias voltages. This makes it ideal for use in high power applications.
In conclusion, the J310RLRP is well-suited for any RF application. Its exceptional performance properties make it the perfect choice for any project requiring the efficient control of RF energy. This article has covered the application field and operating principles of the J310RLRP. With its sound principles and excellent performance, it is clear why the J310RLRP is one of the most widely used FETs today.
The specific data is subject to PDF, and the above content is for reference
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