
Allicdata Part #: | JANS1N6313CUS-ND |
Manufacturer Part#: |
JANS1N6313CUS |
Price: | $ 253.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | VOLTAGE REGULATOR |
More Detail: | Zener Diode 3.6V 500mW ±2% Surface Mount B, SQ-MEL... |
DataSheet: | ![]() |
Quantity: | 1000 |
50 +: | $ 228.15600 |
Series: | Military, MIL-PRF-19500/533 |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 3.6V |
Tolerance: | ±2% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 3µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1A |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, B |
Supplier Device Package: | B, SQ-MELF |
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The JANS1N6313CUS is an axial-leaded Zener diode which provides a cost-effective means of protecting circuits from effects caused by induced transients and electrostatic discharge (ESD). This component is designed to withstand both electrical and mechanical stresses and to offer high reliability in applications with high levels of incoming power. The JANS1N6313CUS is also able to handle power fluctuations and protect against voltage-induced component failures, making it especially suitable for applications which require a wide operating range.
The JANS1N6313CUS utilises a Zener effect to help protect circuits from the effects of induced transients. Zener diode technology works by allowing current to flow in a forward direction when the voltage applied to its terminals is higher than its reverse breakdown voltage. The breakdown voltage can be calculated from the component\'s PIV (peak inverse volt) rating which is rated at 13 Volts in the case of the JANS1N6313CUS. This means that the component will begin to conduct when the voltage across its terminals is higher than 13 Volts, allowing current to flow in a reverse direction and providing protection to the circuit.
The JANS1N6313CUS also offers protection against ESD. The device features multiple levels of internal protection, designed to reduce the effects of rapid voltage changes caused by ESD events. The internal protection scheme consists of a combination of shunt diodes and metal oxide varistors that dissipate energy from the ESD event and prevents excessive current from passing through the component. The device also includes a unique power blocking filter which prevents the component from passing high reverse current when the reverse voltage has exceeded its PIV rating, thus further protecting against ESD.
The JANS1N6313CUS is optimised for applications with a wide operating range and is capable of withstanding power fluctuations. The component is rated at a maximum reverse power of 500mW, and a low reverse leakage current of only 50µA. The component is also capable of operating at temperatures between -40°C and +80°C. In addition, the component has a low profile body and is RoHS compliant making it well suited for a wide range of applications.
In summary, the JANS1N6313CUS is a low-cost and reliable Zener diode designed to provide protection in applications with a wide operating range. The component offers protection from both induced transients and ESD and is capable of handling power fluctuations and protecting against voltage-induced component failures. Its low profile body and RoHS compliance also make it suitable for a wide range of applications.
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