Allicdata Part #: | JANSF2N2484-ND |
Manufacturer Part#: |
JANSF2N2484 |
Price: | $ 98.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | SMALL-SIGNAL BJT |
More Detail: | Bipolar (BJT) Transistor NPN 60V 50mA Through Ho... |
DataSheet: | JANSF2N2484 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 89.32910 |
Series: | Military, MIL-PRF-19500/376 |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 100µA, 1mA |
Current - Collector Cutoff (Max): | 2nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 225 @ 10mA, 5V |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-18 |
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The JANSF2N2484 transistor is a Bipolar Junction Transistor (BJT) device, and is classified as Single type. It is kind of a subtype of BJT, because the BJT has three different types - NPN, PNP, and Darlington. A BJT type transistor consists of three regions of semiconductor material, namely emitter, base, and collector. It is mainly used in amplifier applications and switching operations, and has its own set of working principles.
Application Field
The JANSF2N2484 is frequently used in a variety of applications, such as low-frequency amplifier circuits. This type of transistor is also used in RF and IF amplifiers, low-noise amplifier circuits, low-power circuits, analog-to-digital and digital-to-analog (AD/DA) converters, multilevel modulation circuits, surface acoustical wave (SAW) resonance circuits, and low-power infrared detectors.Furthermore, the JANSF2N2484 can also be used in class-A amplifiers, class-B amplifiers, class-C amplifiers, log amplifiers, differential amplifiers, voltage regulator circuits, oscillator circuits, and tuned amplifiers. It is also useful in different operating frequency bands, such as radio frequencies (HF/VHF/UHF) and microwaves (MMW/LW).
Working Principle
The JANSF2N2484 transistor is a BJT device, and works according to the principle of negative feedback. It means that the input signal is fed into the base probe of the device, and this signal is inverted in the collector probe of the transistor. The output signal of the transistor then travels back to the base and is inverted again, thus providing the negative feedback loop.
The amount of current that is allowed to flow from the collector probe to the emitter probe of the device is determined by the amount of current that flows from the base probe of the device. This is because a small current flow from the base is multiplied by the transconductance gain of the transistor, thus controlling the amount of current that flows from the collector to the emitter.
In addition to this, the JANSF2N2484 transistor can also operate in active region or saturation region. In the active region, the transistor acts as an amplifier, while in the saturation region, it behaves as a switch. The current gain of the transistor, known as the h-parameter, is specified as hfe, and it depends on the base current and emitter current of the device.
The specific data is subject to PDF, and the above content is for reference
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