JANS2N3763 Allicdata Electronics
Allicdata Part #:

1086-16123-ND

Manufacturer Part#:

JANS2N3763

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 60V 1.5A TO-39
More Detail: Bipolar (BJT) Transistor PNP 60V 1.5A 1W Through ...
DataSheet: JANS2N3763 datasheetJANS2N3763 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/396
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Description

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The JANS2N3763 is a silicon NPN transistor in a three-lead MINI-SOT363 package. It is a wideband, high power bipolar transistor designed for communications applications. It is usually used for gain, noise, and power control. The JANS2N3763 is designed for operation from a +3V to +50V supply and it can dissipate up to 400mW at high frequencies. The operating temperature range of the JANS2N3763 ranges from -55°C to +155°C.

The JANS2N3763 is a single bipolar transistor, which is a type of three-terminal semiconductor device that can act as a switch or a current amplifier. It has two P-type and one N-type layers on a silicon substrate. The two P-type layers are called the "base" and "collector" layers, while the N-type layer is called the "emitter" layer. The base layer is the active element while the other two layers are used to provide a greater current gain. When a voltage is applied at the base, it causes current to flow from the collector to the emitter, amplifying the signal. This is known as the current gain of the Bipolar transistor. The collector-emitter voltage that can be obtained is known as the saturation voltage, and the current gain is determined by the ratio of the collector current to the base current.

When designing with the JANS2N3763, the collector current (Ic) should be kept within the device’s operational limits. The absolute maximum current is 2A and the maximum collector-emitter voltage is 30V. Proper heat management should also be taken into consideration to ensure the device does not overheat. It is also important to pay attention to the bias voltage applied to the base of the transistor, as it will affect the gain, power dissipation, and operating temperature of the device.

The JANS2N3763 has a characteristic which makes it suitable for a variety of applications. It is particularly useful for audio frequency amplifiers. This is because of its wideband frequency response, low noise and high rail-to-rail voltage operation. It is also used in power supplies, motor control circuits and as a discrete amplifier element. Additionally, it has good thermal stability and ruggedness, making it suitable for use in industrial applications.

In conclusion, the JANS2N3763 is a compact, high power bipolar transistor suitable for a variety of applications. It can handle high currents and voltages, has wide frequency response and offers good thermal stability and ruggedness. These features make it ideal for use in audio frequency amplifiers, power supplies, motor control circuits and other industrial applications.

The specific data is subject to PDF, and the above content is for reference

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