Allicdata Part #: | JANSR2N2907AUBMS-ND |
Manufacturer Part#: |
JANSR2N2907AUB |
Price: | $ 79.84 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | BJTS |
More Detail: | Bipolar (BJT) Transistor PNP 60V 600mA 500mW Surf... |
DataSheet: | JANSR2N2907AUB Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 72.58230 |
Series: | Military, MIL-PRF-19500/291 |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | UB |
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JANSR2N2907AUB is a NPN silicon planar epitaxial transistor, one of the transistors of the bipolar junction transistors (BJT). Such transistors are type of single and mainly used for switching purpose in various electronic applications. This transistor has a low voltage, low noise and low saturation voltage at slightly earlier current so it can be used in the applications in the fields of those requires low noise, low power and low current operations.
The working principle of JANSR2N2907AUB is based on the principle of injection of majority carriers. Electron currents injected into one side of the BJT allow charge to be transferred across the junction structure and as such influences the current flow through the other side of the structure. Such a mechanism is used in this transistor as two dissimilar semiconductor materials namely N-type component and P-type component are connected in parallel. The uniqueness of this transistor is that it is capable of serving two functions, switch and amplified signal. During switching the transistor will act as a switch that turns the current on or off and during amplifying the transistor can control a larger load current with a smaller control current, by controlling the base current flow.
JANSR2N2907AUB can be found in a variety of electronic applications such as audio amplifiers, audio amplifiers, driver circuits for its low noise and low saturation voltage features. It is also used in relay driver applications as it a low voltage transistor and capable of delivering low power. The transistor is also used in audio stages, DC Preamplifier, electronic translation circuits and various logic circuits for its low noise, low power and high current gains.
The additional features which makes it suitable for various application fields is its low frequency response, linearity of the current-voltage characteristic, integration of the two terminal,transconductance and ability to switching signal. With its low noise, low power consumption and superior current gain characteristics, JANSR2N2907AUB is an ideal choice for various low power switching and audio amplifying applications.
In conclusion, JANSR2N2907AUB is a type of NPN silicon planar epitaxial transistor belongs to the family of bipolar junction transistors (BJT) which mainly used for switching applications. It has a low noise, low power consumption, low voltage and excellent current gain characteristics. This makes it suitable for a variety of electronics applications in the field of audio amplifiers, DC preamplifier, electronic translation circuits, relay driver applications and various logic circuits.
The specific data is subject to PDF, and the above content is for reference
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