JANS1N6677UR-1

Series:	Military, MIL-PRF-19500/610
Packaging:	Bulk
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	40V
Current - Average Rectified (Io):	200mA
Voltage - Forward (Vf) (Max) @ If:	500mV @ 200mA
Speed:	Small Signal =
Current - Reverse Leakage @ Vr:	5µA @ 40V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	DO-213AA (Glass)
Supplier Device Package:	DO-213AA
Operating Temperature - Junction:	-65°C ~ 125°C

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Introduction to JANS1N6677UR-1

JANS1N6677UR-1 is one of the highest performing Schottky barrier rectifiers available today. It is an ultra-low forward voltage Schottky diode, manufactured by Vishay. This device was designed to provide superior performance even in harsh environmental conditions. It\'s most popular application is as a switching diode for voltage suppression, voltage boosting, and other applications where high frequency operation is required.

JANS1N6677UR-1 Application Field and Working Principle

JANS1N6677UR-1 is typically used in applications such as switching power supplies, motor speed controllers, digital power applications, voltage booster circuits, DC/AC converters, and as an output diode in switched mode power supplies. The device operates as a Schottky barrier rectifier in this mode, providing low forward voltage and fast switching times.The main principle of the JANS1N6677UR-1 is its internal diode construction and Schottky barrier. This device has two states, the conduction or on state and the reverse blocking or off state. The barrier effect is caused by the presence of a thin semiconductor junction, located between the cathode and the anode. This junction reduces the forward voltage drop to approximately 0.25 V (or even lower in some cases). The device also has a reverse current blocking capability, meaning that when the device is in its off state, it will block any current flow in the reverse direction.

Device Comparison and Selection

When selecting a device for a particular application, it is important to first compare the performance parameters of the JANS1N6677UR-1 to those of other available devices. In the case of this Schottky diode, its primary benefit lies in its low forward voltage drop, fast switching times, and reverse current blocking capability. The JANS1N6677UR-1 is a excellent choice for applications where high frequency operation and low voltage drop are required. It can also work well in environments with severe mechanical or temperature stress. Other devices offering similar performance include the SILICONIX Semiconductor S51P05, Rohm Semiconductor SDS3A, and Diodes Incorporated DMTX-0220. For applications requiring lower on-state voltage drop, such as some logic circuits, the Vishay PDZ65V-S is a better choice.

Conclusion

The JANS1N6677UR-1 is a high-performance Schottky barrier rectifier manufactured by Vishay. It was designed to provide superior performance even in harsh environmental conditions, and is well-suited for applications requiring high frequency switching and low voltage drop. When selecting a device for a particular application, it is important to compare the performance parameters of the JANS1N6677UR-1 to those of other available devices, and to select the one that best meets the requirements.

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