| Allicdata Part #: | 1086-15963-ND |
| Manufacturer Part#: |
JANS1N6321 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 6.6V 500MW DO35 |
| More Detail: | Zener Diode 7.5V 500mW ±5% Through Hole DO-35 |
| DataSheet: | JANS1N6321 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | Military, MIL-PRF-19500/533 |
| Packaging: | Bulk |
| Part Status: | Discontinued at Digi-Key |
| Voltage - Zener (Nom) (Vz): | 7.5V |
| Tolerance: | ±5% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 4 Ohms |
| Current - Reverse Leakage @ Vr: | 2µA @ 5V |
| Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1A |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AH, DO-35, Axial |
| Supplier Device Package: | DO-35 |
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The JANS1N6321 is a type of Zener Diode that can provide an excellent level of isolation to suppress voltage surges and transients. The devices are constructed with a bulk of semiconductor material having two differently doped regions. They are designed to allow current to flow in only one direction, which helps to protect electrical circuits from damage due to voltage transients. The devices usually have a breakdown voltage of 5.6V, and a maximum power dissipation of 500mW, although this may vary with manufacturer and model.
The application of the JANS1N6321 covers a variety of fields. It is widely used in the protection of power supplies, UPS systems, and other voltage-sensitive equipment. It can also be used for overvoltage and transient suppression in avionics, telecommunication, and other industrial applications. The device is typically mounted on a printed-circuit board or other substrate and connected directly to the components that require protection.
The working principle of the JANS1N6321 is based on the functioning of a Zener diode. A Zener diode is constructed in a similar manner to a normal PN junction diode, with the main difference being that the PN junction in a Zener diode is reverse-biased. This causes a breakdown in the electric field across the diode and allows a reverse current to flow. When the voltage across the diode reaches the breakdown voltage, the current is typically limited to a few milliamps and the voltage across the diode remains at the breakdown voltage. This phenomenon is known as the Zener effect.
The JANS1N6321 is designed to perform Zener breakdown at a much lower voltage than standard PN junction diodes. Its working principle is based on the fact that at a certain reverse bias voltage, the electrons in the conduction band and holes in the valence band starts to over-lap giving rise to the Zener breakdown. This allowed the JANS1N6321 to provide a much lower threshold voltage for DC and AC applications.
The JANS1N6321 also utilizes a formulation known as avalanche breakdown to provide a higher breakdown voltage and better protection from surges and transients. In this process, electrons in the conduction band becomes accelerated and multiplied due to the electrical field, producing chain reactions. This causes an increase in the current through the diode and the voltage across the diode will remain clamped at its breakdown voltage, which provides surge protection and can prevent damage to the electrical circuit.
In summary, the JANS1N6321 is a type of Zener diode with a breakdown voltage of 5.6V, and a maximum power dissipation of 500mW, that provides voltage isolation and protection against surges and transients. It is often used in power supplies, UPS systems, avionics, telecommunication, and other industrial applications. The device utilizes the Zener effect to limit the voltage across it, and the avalanche breakdown process to protect against surges and transients.
The specific data is subject to PDF, and the above content is for reference
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JANS1N6321 Datasheet/PDF