JANS1N6316DUS Allicdata Electronics
Allicdata Part #:

JANS1N6316DUS-ND

Manufacturer Part#:

JANS1N6316DUS

Price: $ 258.92
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: VOLTAGE REGULATOR
More Detail: Zener Diode 4.7V 500mW ±1% Surface Mount B, SQ-MEL...
DataSheet: JANS1N6316DUS datasheetJANS1N6316DUS Datasheet/PDF
Quantity: 1000
50 +: $ 233.02400
Stock 1000Can Ship Immediately
$ 258.92
Specifications
Series: Military, MIL-PRF-19500/533
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±1%
Power - Max: 500mW
Impedance (Max) (Zzt): 17 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Description

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The JANS1N6316DUS diode is a single Zener diode designed for applications requiring a breakdown voltage near 5.6 volts. It is widely used in power management applications where reliable low-voltage protection is required. It is designed for use in low-power applications such as RFID and cellular transceivers.

The JANS1N6316DUS is an epitaxial silicon junction diode suitable for a variety of semiconductor applications. It is constructed with an N-type substrate and an N+ epi layer. The source and drain regions are diffused on either side of the epitaxial layer. An oxide layer is added to isolate the oxide field plate from the silicon body of the device. A gate oxide is formed to enable current to be passed through the device.

The JANS1N6316DUS features a breakdown voltage of 5.6V, a reverse leakage current of less than 1uA, a junction capacitance of 4pF, an operating temperature range of -65°C to 150°C, a maximum current ratings of 1A, and a reverse blocking voltage of 5.3V.

The working principle of the JANS1N6316DUS diode is based on the highly conductive nature of electrons moving towards the anode under forward bias. When the reverse bias is applied to the diode, a differential voltage is created in the diode which causes a forward current to flow through the diode. This forward current is blocked until the breakdown voltage is reached, at which point a high current runs through the device and the Zener breakdown occurs. This voltage is then used as a reference voltage for regulating circuits and other high current applications.

The JANS1N6316DUS diode is a highly reliable component for power management applications. It is designed to maintain a high breakdown voltage, low leakage current and low junction capacitance, allowing it to maintain a constant output voltage even in the face of input voltage fluctuations. The device is also designed to operate at very low power and temperature, making it ideal for RFID and cellular transceivers.

The JANS1N6316DUS diode is a practical solution for applications requiring a reliable and low-cost solution for low-voltage protection. It is also suitable for use in other low-power applications such as switching power supplies, LED lighting, and low-power line-powered systems. Its low forward and reverse voltage drops, low leakage current, and low junction capacitance make it an ideal choice for power management applications.

The specific data is subject to PDF, and the above content is for reference

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