
Allicdata Part #: | JANS1N6318D-ND |
Manufacturer Part#: |
JANS1N6318D |
Price: | $ 220.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | VOLTAGE REGULATOR |
More Detail: | Zener Diode 5.6V 500mW ±1% Through Hole DO-35 (DO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
50 +: | $ 198.08000 |
Series: | Military, MIL-PRF-19500/533 |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.6V |
Tolerance: | ±1% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 8 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 2.5V |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1A |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | B, Axial |
Supplier Device Package: | DO-35 (DO-204AH) |
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Diodes are semiconductor devices that can control the flow of electrical current due to their rectifying properties. The Zener diode is a special type of diode that is designed to allow current to flow in both directions, but is normally used for current to pass in the reverse direction. Single Zener diodes are common in many applications, ranging from power protection and voltage regulation. In this article, we will discuss the JANS1N6318D and its application field, as well as its working principle.
Application Field
The JANS1N6318D is a single Zener diode that is used for applications that require maximum reverse power dissipation (PD) of 1.3W and maximum operating junction temperature (Tj) of 150°C. It is designed with a Polarity-Matching Diode(PMD) structure and has a low zener voltage of 0.1V, making it suitable for a wide range of low-voltage applications. It can be used in various applications such as mobile phones, cameras, computers, game consoles, and other electrical/electronic devices. It is most often used to protect circuit components from over-voltage conditions, voltage blocks, and transient-voltage surges.
Working Principle
The JANS1N6318D diode operates on the principle known as the Zener Breakdown Effect. This effect occurs when electrons in the forward-biased junction between the N-type and P-type materials gain enough energy to break apart the barrier created by the junction. When this occurs, the structure of the crystal is disrupted, resulting in a “breakdown” or a sudden increase in current through the diode. Because the diode is designed to breakdown at a predetermined voltage, it acts as a voltage regulator and can be used to “absorb” excess voltage in circuits and prevent damage.
The JANS1N6318D has an operating temperature range of -55°C to 150°C and features a positive temperature coefficient that increases its breakdown voltage as the temperature increases. Additionally, the reverse leakage current is extremely low, making it suitable for very low-voltage applications. The diode also features an Electrically-Healable Polymer Leakage Junction (EHP) technology which improves the reverse leakage current even further.
Conclusion
The JANS1N6318D is a single Zener diode that is suited for many low-voltage applications, ranging from power protection and voltage regulation. Its low Zener voltage, wide operating temperature range, and low reverse leakage current make it an ideal choice for any application requiring a precision voltage regulator or protective device. By taking advantage of the Zener breakdown effect, the JANS1N6318D is able to effectively absorb excess voltage and protect delicate electronic components from short-term voltage surges and other potential risks.
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