JANS2N6250T1 Allicdata Electronics
Allicdata Part #:

1086-16187-ND

Manufacturer Part#:

JANS2N6250T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 275V 10A TO-3
More Detail: Bipolar (BJT) Transistor NPN 275V 10A 6W Through ...
DataSheet: JANS2N6250T1 datasheetJANS2N6250T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/510
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Power - Max: 6W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Description

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The JANS2N6250T1 is a single transistor featuring excellent performance under high temperature that is designed for use in Darlington and low noise amplifier circuits. It also finds applications in switching power this transistor can operate over a wide range of temperatures, from -65°C to +150°C. Constructed using advanced BiCMOS technologies, this transistor can be used in high sensitivity applications such as low-noise amplifiers, digital potentiometers and low-distortion audio amplifiers.

Unlike the bipolar junction transistors (BJT) and field effect transistors (FET), the JANS2N6250T1 is characterized with higher input impedance, higher frequency response, and wider dynamic range owing to its structure as a single transistor. A single transistor incorporates a bank of multiple interconnected BJTs, which increases its performance metrics when compared to a single BJT or FET.

The working principle of the JANS2N6250T1 can be explained as follows. The transistor consists of layers of three semiconductors, the base, collector and emitter, which are connected to source and drain lines. A positive voltage is applied to the emitter, which causes electrons to flow from the emitter to the collector, creating a current. The current flow between the emitter and collector is controlled by the voltage applied to the base. The JANS2N6250T1 uses this current flow to control other components in the circuit, such as switching transistors on or off.

The JANS2N6250T1 has a wide range of applications in low-noise amplifier, low distortion audio amplifier, switch power supply, digital potentiometer, and high-sensitivity amplifier circuits. It is also suitable for applications such as audio amplifiers, video amplifiers, and telecom amplifiers. The device\'s high frequency response, low noise, and wide dynamic range make it an ideal choice for any digital, analog, or mixed signal circuit.

As a highly reliable, low-noise, and high-sensitivity single transistor, JANS2N6250T1 is suitable for a wide range of applications. The JANS2N6250T1 is designed to provide excellent performance even under extreme temperatures and is an ideal choice for any design requiring a reliable, low power consumption, high-performance transistor.

The specific data is subject to PDF, and the above content is for reference

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