JANS2N5416U4 Allicdata Electronics
Allicdata Part #:

1086-16148-ND

Manufacturer Part#:

JANS2N5416U4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 300V 1A
More Detail: Bipolar (BJT) Transistor PNP 300V 1A 1W Surface M...
DataSheet: JANS2N5416U4 datasheetJANS2N5416U4 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/485
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4
Description

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Transistors - Bipolar (BJT) - Single

The JANS2N5416U4 is a type of single-transistor bipolar junction transistor (BJT) packaged in a TO-92 plastic molded housing. It is a general-purpose amplifier or switch with a maximum collector current of around 500mA for high saturated currents. JANS2N5416U4 is used mainly in consumer electronics and can be used in a wide range of applications including transistor switching, motor speed control, voltage saturation and current amplification.

The JANS2N5416U4 is generally deployed in industries such as automotive, industrial and consumer electronics and is used in applications where the transistor must be able to handle the power needed to perform its function. It is commonly used in digital circuits, such as electromagnetic solenoids, relays, windings and other logic designs. Other applications include amplifiers, signal processors, signal conditioners, controllers, instrumentation and medical equipment.

Working Principle

The JANS2N5416U4 is an n-channel BJT type transistor. This transistor works in much the same way as an n-channel MOSFET type transistor. The N-type semiconductor material provides an excess of electrons, which makes it a negative material, in contrast to the P-type semiconductor material which provides an excess of holes and thus works positively.

The terminal current is used to control the transistor\'s voltage in the same way for both n-channel MOSFETs and BJTs. The base-emitter junction of the BJT works as a voltage-controlled resistor, and the base-emitter voltage controls the amount of current flowing through the transistor. This same current is then used to control the current flowing through the terminals. The major difference between the two types of transistors is the current used to control the voltage of the transistor. In the case of an n-channel MOSFETs, an electric field is used while in the case of the BJT, a base-emitter current is used.

JANS2N5416U4 can be used in many different design applications. It is a great choice for applications requiring high performance, high gain and low power consumption. It can be used for switching and signal conditioning as well as for amplifying audio or other low frequency signals. Additionally, it can be used for circuits controlling analog and digital logic signals, or for controlling small servomotors.

The specific data is subject to PDF, and the above content is for reference

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