JANSR2N7380

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-257-3
Supplier Device Package:	TO-257
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2W (Ta), 75W (Tc)
FET Feature:	--
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 12V
Series:	Military, MIL-PRF-19500/614
Rds On (Max) @ Id, Vgs:	200 mOhm @ 14.4A, 12V
Drive Voltage (Max Rds On, Min Rds On):	12V
Current - Continuous Drain (Id) @ 25°C:	14.4A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

There are many types of transistors available on the market today and one of them is the JANSR2N7380. It is a single, high-voltage, fast-switching, low-power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of transistor has a wide variety of applications and is able to provide high switching speeds and low power consumption.The JANSR2N7380 is widely used in the protection and control of low-voltage circuits, as it can provide a reliable and efficient protection against high-voltage transients. It is mainly used in automotive, industrial, and medical applications, as it is able to provide reliable and fast performance. It is also a suitable choice for integrated circuits due to its low power consumption and low-cost features.The working principle of JANSR2N7380 is based on a simple circuit arrangement. Its purpose is to switch current between input and output terminals by controlling the voltage applied to the gate terminal. This type of transistor is commonly operated in either enhancement or depletion mode, depending on the applied drain voltage.In the enhancement mode, a positive voltage is applied to the gate terminal to increase the flow of current from source to drain. On the other hand, in the depletion mode, a negative voltage is applied to the gate terminal which decreases the flow of current from source to drain.The typical gate-source voltage range for this type of MOSFET is from -5V to 6V. The typical drain-source voltage range for this transistor is from 0V to 500V and the ON-resistance is typically in the range of 1- 10KOhms.In addition to its low power consumption and low cost, the JANSR2N7380 offers several other advantages. One of them is its noise immunity, which means that it is able to block high-frequency noise signals and ensure a high performance. It also offers a high frequency response which makes it suitable for applications that require high bandwidth. The JANSR2N7380 is highly reliable and offers a long lifetime when compared to other FETs.Overall, the JANSR2N7380 is an excellent choice for a wide range of applications where low power consumption, high switching speeds and reliability are required. The transistor offers an excellent combination of high performance, low cost, and long lifetime.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description