JANSR2N7381

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JANSR2N7381 is a N-channel enhancement-mode silicon gate field-effect transistor (FET). It is often used to construct linear power supply circuits, amplifiers, and digital logic gates, and is highly suitable for use in audio frequency applications and general electrical engineering.The JANSR2N7381 is available in a TO-236AB (SOT-23) package. This package is designed with metal surfaces and a center-tapped drain contact, allowing for dual-gate construction and shielding to mitigate unwanted dc or ac signals.The JANSR2N7381 is designed to provide surge overload protection for semiconductors and contains an internal temperature sensor, protection diodes, and an overload protection circuit. The built-in temperature sensor automatically adapts the FET’s threshold voltage to the current temperature and helps to prevent thermal runaway. This temperature adaptation can be used to reduce the power dissipation in linear power supply applications, while protecting the device from both overload and short circuits.The JANSR2N7381 has a typical breakdown voltage of 75 V and a maximum drain-source voltage of 100 V. This makes it appropriate for a range of low- and medium-voltage applications. The FET has a maximum continuous drain current of 0.9 A, with a peak drain current of 1.2A.The JANSR2N7381 has a maximum transconductance of 6.3 mS and a low input capacitance of 4.3 pF. This ensures that the device provides high current capability and low gate-source capacitance. This makes the JAN SR2N7381 particularly suitable for use in high-speed, high-gain circuits.The JANSR2N7381 is a n-type MOSFET, so it operates under the mechanism of electron-conduction, which means that its output depends on the magnitude of its output voltage. This means that when the source voltage is greater than the threshold voltage, current will flow from the drain to the source.The working principle of the JANSR2N7381 is based on its silicon gate-layer. The gate-layer consists of an array of single-crystalline silicon pillars. When a positive voltage is applied to the gate, the silicon pillars attract electrons, creating the necessary channel for conduction to occur. The width of the channel is determined by the magnitude of the applied voltage and the physical properties of the silicon pillars.The FET can be used to amplify signals, since it acts as a voltage-controlled switch. In linear power supplies, the FET can be used to regulate the current passing through the load, providing an efficient and low-noise power supply. In amplifiers, the FET can be used to control the gain and phase of an audio signal.The JANSR2N7381 is a highly reliable and efficient FET, due to its low input capacitance, high current capability, and fast switching. It is capable of providing high performance and consistent performance over a wide temperature range, making it an ideal choice for a variety of applications.

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