Allicdata Part #: | JANSF2N2222A-ND |
Manufacturer Part#: |
JANSF2N2222A |
Price: | $ 54.96 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | SMALL-SIGNAL BJT |
More Detail: | Bipolar (BJT) Transistor NPN 50V 800mA 500mW Thro... |
DataSheet: | JANSF2N2222A Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 49.96480 |
Series: | Military, MIL-PRF-19500/255 |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-18 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The JANSF2N2222A is one of the most common types of transistors. It is a single-stage, NPN bipolar junction transistor (BJT). It is used in a variety of applications, from simple switching circuits to amplifiers. It has good performance characteristics, including high gain, good input impedance, very low output impedance, and can operate at frequencies up to 200 MHz. It also has a low power dissipation, making it suitable for battery-powered devices.
JANSF2N2222A Application Field
The JANSF2N2222A is commonly used in many applications, including audio and video amplifiers, low-power switching circuits, relays, low-power DC motors, and other high-frequency circuits. It is a general-purpose transistor, which means it can be used in a variety of applications. It is suitable for small-signal circuits, such as amplifiers or switching circuits, or for large-signal circuits, such as relays or DC motors.
The JANSF2N2222A is also suitable for applications where the power requirements are not too high. It can be used for power amplifiers or other high-power applications, but it is not ideal for those applications. It is best suited for small-signal circuits and relays. It can also be used as a driver transistor for other transistors, such as transistors with higher power dissipation.
JANSF2N2222A Working Principle
The JANSF2N2222A is an NPN Bipolar Junction Transistor (BJT). It consists of three terminals, namely the emitter, base, and collector. When a voltage is applied to the base terminal, it creates a current between the emitter and collector terminals. This current is called the collector current. The amount of current that flows between the emitter and collector terminals is determined by the voltage applied to the base terminal. The higher the base voltage, the higher the collector current.
The collector current also depends on the amount of current flowing from the emitter to the base. This current is known as the emitter current. The greater the emitter current, the higher the collector current. This is known as the current gain of the transistor, and is generally represented by the letter ‘h’.
The JANSF2N2222A has a current gain of about 300. This means that for every 1 mA of current flowing from the emitter to the base, the transistor can amplify it to a maximum of 300 mA of collector current.
The JANSF2N2222A also has a high switching speed, which means that it is capable of quickly turning on and off. This makes it suitable for applications such as switching circuits, relays, and pulse width modulation (PWM).
Conclusion
The JANSF2N2222A is a single-stage, NPN bipolar junction transistor (BJT). It is suitable for a variety of applications, ranging from simple switching circuits to amplifiers. It has good performance characteristics, including high gain, good input impedance, very low output impedance, and can operate at frequencies up to 200 MHz. It also has a low power dissipation, making it suitable for battery-powered devices. Its collector current is determined by the voltage applied to the base terminal and the current flowing from the emitter to the base. The JANSF2N2222A has a current gain of about 300 and a high switching speed, making it suitable for applications such as switching circuits, relays, and pulse width modulation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
JANS1N6125A | Microsemi Co... | 82.94 $ | 1000 | TVS DIODE 47.1V 85.3V AXI... |
JANS1N6116US | Microsemi Co... | 97.58 $ | 1000 | HI REL TVS |
JANS1N6172AUS | Microsemi Co... | 109.21 $ | 1000 | TVS DIODE 136.8V 245.7V S... |
JANS1N6142AUS | Microsemi Co... | 125.47 $ | 1000 | TVS DIODE 7.6V 14.5V C SQ... |
JANS1N4100-1 | Microsemi Co... | 53.61 $ | 500 | DIODE ZENER 7.5V 500MW DO... |
JANS1N4120-1 | Microsemi Co... | 53.61 $ | 498 | DIODE ZENER 30V 500MW DO3... |
JANS1N4125UR-1 | Microsemi Co... | 66.46 $ | 500 | DIODE ZENER 47V 500MW DO2... |
JANS1N4614-1 | Microsemi Co... | 93.56 $ | 482 | DIODE ZENER 1.8V 500MW DO... |
JANS1N4462 | Microsemi Co... | 100.77 $ | 500 | DIODE ZENER 7.5V 1.5W DO2... |
JANS1N4476 | Microsemi Co... | 100.77 $ | 500 | DIODE ZENER 30V 1.5W DO20... |
JANS1N4461 | Microsemi Co... | 100.77 $ | 491 | DIODE ZENER 6.8V 1.5W DO2... |
JANS1N6324 | Microsemi Co... | 109.54 $ | 480 | DIODE ZENER 10V 500MW DO3... |
JANS1N4468US | Microsemi Co... | 116.33 $ | 500 | DIODE ZENER 13V 1.5W D5AZ... |
JANS1N6328US | Microsemi Co... | 122.12 $ | 256 | DIODE ZENER 15V 500MW B-S... |
JANS1N4568A-1 | Microsemi Co... | 152.43 $ | 480 | DIODE ZENER 6.4V 500MW DO... |
JANS1N6320US | Microsemi Co... | 155.52 $ | 109 | DIODE ZENER 6.8V 500MW B-... |
JANS1N4569A-1 | Microsemi Co... | 252.45 $ | 488 | DIODE ZENER 6.4V 500MW DO... |
JANS1N4109UR-1 | Microsemi Co... | 66.46 $ | 19 | DIODE ZENER 15V 500MW DO2... |
JANS1N4618UR-1 | Microsemi Co... | 93.6 $ | 15 | DIODE ZENER 2.7V 500MW DO... |
JANS1N4467 | Microsemi Co... | 100.77 $ | 6 | DIODE ZENER 12V 1.5W DO20... |
JANS1N4471US | Microsemi Co... | 116.33 $ | 3 | DIODE ZENER 18V 1.5W D5AZ... |
JANS1N6326US | Microsemi Co... | 122.12 $ | 22 | DIODE ZENER 12V 500MW B-S... |
JANS1N4962US | Microsemi Co... | 122.21 $ | 25 | DIODE ZENER 15V 5W D5BZen... |
JANS1N4971US | Microsemi Co... | 122.21 $ | 6 | DIODE ZENER 36V 5W D5BZen... |
JANS1N4972US | Microsemi Co... | 122.21 $ | 3 | DIODE ZENER 39V 5W D5BZen... |
JANS1N4960US | Microsemi Co... | 122.21 $ | 2 | DIODE ZENER 12V 5W D5BZen... |
JANS1N6320 | Microsemi Co... | 231.12 $ | 10 | DIODE ZENER 6.8V 500MW DO... |
JANS1N4996US | Microsemi Co... | 268.98 $ | 10 | DIODE ZENER 22V 5W D5BZen... |
JANS1N6318US | Microsemi Co... | 268.98 $ | 7 | DIODE ZENER 5.6V 500MW B-... |
JANSF2N7383 | Microsemi Co... | 0.0 $ | 1000 | P CHANNEL MOSFET TO-257 |
JANSR2N7261U | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET LCC-18N-... |
JANSR2N7262U | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET LCC-18N-... |
JANSR2N7268U | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET SMD-1N-C... |
JANSR2N7269 | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET TO-254N-... |
JANSR2N7269U | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET SMD-1N-C... |
JANSR2N7380 | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET TO-257 R... |
JANSR2N7381 | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET TO-257 R... |
JANSR2N7389 | Microsemi Co... | 0.0 $ | 1000 | P CHANNEL MOSFET TO-39P-C... |
JANSR2N7389U | Microsemi Co... | 0.0 $ | 1000 | P CHANNEL MOSFET LCC-18P-... |
JANS2N3499L/TR | Microsemi Co... | 0.0 $ | 1000 | SMALL-SIGNAL BJTBipolar (... |
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
TRANS PNP DARL 30A 120V DIEBipolar (BJT)...
TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
TRANS PNP 140V 1ABipolar (BJT) Transisto...
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...