| Allicdata Part #: | JANSR2N3700UB-ND |
| Manufacturer Part#: |
JANSR2N3700UB |
| Price: | $ 79.91 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | RH SMALL-SIGNAL BJT |
| More Detail: | Bipolar (BJT) Transistor NPN 80V 1A 500mW Surface... |
| DataSheet: |  JANSR2N3700UB Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 72.64600 |
Specifications
| Series: | Military, MIL-PRF-19500/391 |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 1A |
| Voltage - Collector Emitter Breakdown (Max): | 80V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 500mA, 10V |
| Power - Max: | 500mW |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 4-SMD, No Lead |
| Supplier Device Package: | UB |
Description
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The JANSR2N3700UB is a PNP Bipolar Transistor (BJT) manufactured by Fairchild Semiconductor. It is a single discrete device and its main purpose is to provide amplification and switching functions. It is a sub category of transistors known as ‘Bipolar junction transistors’ and is commonly referred to as a BJT transistor. This type of transistor is an N-channel device that has two P-type layers in between an N-type Layer. The two P-type layers are known as the emitter and the collector respectively. The base layer is the area between the two P-type layers and provides the connection between the emitter and collector layers. The JANSR2N3700UB is typically used as a switching and amplification device in audio amplifiers, radios, televisions and other electronic equipment. It can also be used for powering motors and other electrical components that require a high frequency and high power operation. It is also suitable for high voltage applications and can be used to switch between high frequency levels. This type of transistor is also known for its high gain, low input resistance and very low frequency of operation. In terms of its working principle, the JANSR2N3700UB operates on the concept of emitter-base junction. When the base voltage is increased, electrons start flowing from the emitter to the collector. The electrons will then be collected by the collector and the current will then be increased. This action is known as recombination, as electrons are being removed from the base and collected by the collector. This increased current then amplifies the base voltage, thus providing the power to the other components. The JANSR2N3700UB can be used in a wide range of applications ranging from powering motors, electrical components and even audio amplifiers. It is also suitable for high voltage applications and can be used to switch between high frequency levels. The device is also suitable for low frequency applications, as its low input resistance and high gain characteristics make it an ideal choice for such applications. The JANSR2N3700UB is a PNP Bipolar Transistor that is typically used as a switching and amplification device. Its main purpose is to provide both high power frequencies and high voltage signals. It operates on the concept of emitter-base junction, where an increase in the base voltage results in an increase in current, which amplifies the base voltage. The device is suitable for use in a variety of applications such as powering motors and components, audio amplifiers, and for use in high voltage applications.The specific data is subject to PDF, and the above content is for reference
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