Allicdata Part #: | JANSR2N5152U3-ND |
Manufacturer Part#: |
JANSR2N5152U3 |
Price: | $ 119.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RH POWER BJT |
More Detail: | Bipolar (BJT) Transistor NPN 80V 2A Surface Moun... |
DataSheet: | JANSR2N5152U3 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 108.83900 |
Series: | Military, MIL-PRF-19500/544 |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 500mA, 5A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 2.5A, 5V |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | U3 |
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JANSR2N5152U3 Application Field and Working Principle
JANSR2N5152U3 transistors belong to the bipolar junction transistor (BJT) single category which is a three terminal device constructed with either a P-N-P or N-P-N semiconductor. It is designed for a wide variety of general purpose amplifications and switching applications in low voltage and low current circuits. As part of the JANSR2N5152U3 series, these transistors are ideal for today’s circuit designs where flexibility, reliability and cost are key considerations.
Applications
The JANSR2N5152U3 can be used in a variety of general purpose amplification and switching applications. These applications include: current amplification, voltage amplification, RF amplification, rectification, stabilization, switching, logic gates, oscillators, mixers, detectors and more.
The transistor is also used in many areas of current technology including smartphone circuitry, computer components, televisions, games consoles, digital cameras, automotive electronics and many more.
Working Principle
The JANSR2N5152U3 is a bipolar transistor, meaning it has two p-type and n-type semiconductors connected together to form a junction. The BJT has three terminals – Collector (C), Emitter (E) and Base (B). Inside the transistor, base current (IB) flows between the Collector and Emitter, controlling the flow of Collector current (IC). As this current travels in the forward direction, a voltage drops across the transistor’s internal resistance.
The Base-Collector junction of the JANSR2N5152U3 is forward biased, meaning the voltage at the Base is higher than that at the Collector. When the Base is negative (with reference to the Collector), no current flows through the junction as the Base-Collector junction is reverse biased. By varying the amount of current through the Base, the amount of current through the Collector can be varied.
Summary
The JANSR2N5152U3 is part of a series of transistors designed for a wide variety of general purpose amplification and switching applications. It utilizes a bipolar junction transistor that has two p-type and n-type semiconductors connected together to form a junction. Three terminals – Collector, Emitter and Base – allow varying amounts of current to flow through the device depending on the voltage applied to the Base. The JANSR2N5152U3 is used in many areas of current technology, making it ideal for circuit designs where flexibility, reliability and cost are key considerations.
The specific data is subject to PDF, and the above content is for reference
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