Allicdata Part #: | 1086-15689-ND |
Manufacturer Part#: |
JANTX1N3291 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 400V 100A DO205AA |
More Detail: | Diode Standard 400V 100A Chassis, Stud Mount DO-20... |
DataSheet: | JANTX1N3291 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/246 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 100A |
Voltage - Forward (Vf) (Max) @ If: | 1.55V @ 310A |
Speed: | Small Signal = |
Current - Reverse Leakage @ Vr: | 10mA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-205AA, DO-8, Stud |
Supplier Device Package: | DO-205AA (DO-8) |
Operating Temperature - Junction: | -65°C ~ 200°C |
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Introduction to JANTX1N3291
The JANTX1N3291 is a rectifier diode designed for use in high-speed, low-voltage applications. It is an ultra-fast, silicon, side-by-side, Schottky rectifier. The forward voltage drop is approximately 0.40V and the forward current is 7A. It is capable of withstanding 25V reverse voltage and operating at repetition rates up to 175 MHz with no performance degradation. It is also capable of blocking reverse voltage with an average reverse current of 1mA.
Application Field
The JANTX1N3291 is typically used in high-voltage circuits, such as power supplies, audio amps, and DC power sources. It is also ideal for high-frequency applications, such as switching power supplies, digital signal processing, frequency synthesizers and RF amplifiers. This diode is particularly useful in circuits requiring low Vf, low reverse leakage and large current switching capability. It is also suitable for high-frequency AC and DC circuits, requiring both short and long-term stability under varying environmental conditions.
Working Principle
A diode is a semiconductor device, which can only allow current to flow in one direction. It is made up of two regions, called the anode and the cathode, connected by a layer of semiconductor material, typically silicon. The anode is connected to the positive side of the power supply and the cathode is connected to the negative side. When a voltage is applied to the positive side of the diode, it forms an electric field across the junctions. This electric field causes electrons in the semiconductor material to move toward the positive side of the diode, creating a current through the diode.
The diode also has a specific reverse breakdown voltage, which is the voltage at which current begins to flow through the diode in the reverse direction. This voltage is dependent on the doping level of the semiconductor material from which the diode is made. The JANTX1N3291 has a breakdown voltage of 25V, making it suitable for use in high-voltage applications.
In addition to allowing current to flow in one direction, the diode also acts as a protection device. This is due to its ability to stop reverse currents from flowing in the event of a short circuit or other fault. This prevents damage to other components in the circuit. This is commonly referred to as “clamping”.
Conclusion
The JANTX1N3291 is an ultra-fast, silicon, side-by-side, Schottky rectifier. It is capable of withstanding 25V reverse-voltage and operating at repetition rates up to 175 MHz with no performance degradation. This diode is typically used in high-voltage circuits, such as power supplies and audio amps, as well as in high-frequency applications requiring low Vf, low reverse leakage and large current switching capability. In addition to allowing current to flow in one direction, it also acts as a protection device, stopping reverse currents from flowing in the event of a short circuit.
The specific data is subject to PDF, and the above content is for reference
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