JANTX1N4969US Allicdata Electronics
Allicdata Part #:

JANTX1N4969USS-ND

Manufacturer Part#:

JANTX1N4969US

Price: $ 8.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Semtech Corporation
Short Description: 30V ZENER 500W
More Detail: Zener Diode
DataSheet: JANTX1N4969US datasheetJANTX1N4969US Datasheet/PDF
Quantity: 1000
250 +: $ 7.46438
Stock 1000Can Ship Immediately
$ 8.3
Specifications
Series: *
Part Status: Active
Description

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The JANTX1N4969US is a single Zener Diode effectively used for general purpose switching and rectification applications in consumer, commercial and industrial segments. It can be used for clamping, reverse battery protection, voltage reference and voltage surge protection. It is constructed of an active junction, operating in a single forward-biased and reverse-biased mode according to the applied conditio.

A Zener diode is a special type of semiconductor diode that behaves differently from a normal PN junction. It operates in reverse bias, meaning the applied voltage is higher than the PN junction\'s built-in voltage. When the voltage exceeds the Zener voltage, a break-down effect occurs, causing holes to flow and current to flow in the reverse direction. This permits the diode to act as a voltage regulator, preventing the voltage applied to it from exceeding the breakdown voltage.

JANTX1N4969US comes with a very low on-state voltage drop of 0.8V and a very low reverse leakage current of 1uA at 5V. The series also provides a low Zener impedance of 0.75 ohm and a working voltage range of 4.75V to 5.25V. Its maximum power rating is 100mW with a maximum clamping voltage of 7.5V. Its junction temperature range is –55°C to 150°C.

The device has a close tolerance, working with a very high reliability, and is a popular choice for military and aerospace applications as it has a lower chance of malfunctioning due to its higher tolerance for voltage fluctuations and surges. Its small physical size makes it attractive for applications in densely populated areas.

In terms of its working principle, the JANTX1N4969US utilizes the reverse-bias structure of the diode, where its built-in electric field helps to ensure the demanded breakdown voltage and anode-cathode leakage current. The breakdown voltage is determined using the so-called Zener characteristic, in which the voltage at the cathode relative to the anode remains constant when the reverse-bias voltage exceeds the Zener voltage.

Overall, the JANTX1N4969US is used widely in various electronic products and systems, in automotive, telecommunication and consumer electronics, due to its robust structure and performance features. It is especially suitable for the mentioned military and aerospace applications since it is highly reliable even in extreme conditions.

The specific data is subject to PDF, and the above content is for reference

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