Allicdata Part #: | 1086-18644-ND |
Manufacturer Part#: |
JANTX1N4976D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 56V 5W E AXIAL |
More Detail: | Zener Diode 56V 5W ±1% Through Hole E, Axial |
DataSheet: | JANTX1N4976D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/435 |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 56V |
Tolerance: | ±1% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 35 Ohms |
Current - Reverse Leakage @ Vr: | 2µA @ 42.6V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 1A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | E, Axial |
Supplier Device Package: | E, Axial |
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The JANTX1N4976D is a diode-zener single, specifically designed for high-intensity inductive and capacitive loads in applications that require low power losses. It is constructed to enable a low voltage breakdown, with a leakage current of only a few milliamps.
The JANTX1N4976D is a small, low cost, medium-power switchmode output type Zener diode. It is designed to protect various types of circuits and systems from transient voltages, such as those generated by lightning and other sources. An important feature of the device is its small, compact form factor and low power dissipation in comparison to traditional Zener diodes.
The JANTX1N4976D is typically used for transient voltage surge suppression, ESD protection and overvoltage protection. It is designed for use in almost any application in which the spike or noise suppression of voltages is needed. Its reverse breakdown voltage is approximately 8 V, and its temperature coefficient is approximately 2700 PPM/°C.
The JANTX1N4976D operates by allowing a small, controlled flow of current when the voltage exceeds its reverse breakdown voltage. This decreases the voltage to a safe level, reducing the energy and thus protecting the system against overvoltage.
The JANTX1N4976D is suitable for use in automotive and audio applications, as well as in various power and communication systems. It can be used in a variety of switching applications, such as over-voltage protection, voltage limiting, and current limiting. The device is also suitable for use in circuits that require low power consumption and high noise immunity. The device is also suitable for use in circuits that require low power consumption and low power dissipation.
The JANTX1N4976D has an integrated scheme that allows its operation without an external power source. Its power consumption is minimal even during its normal operations and it maintains a low profile. Its leakage current is also very low.
The JANTX1N4976D has a low leakage current, a high area ratio, a low forward drop, and a low profile package that makes it ideal for use in high intensity inductive and capacitive loaded applications. The device is designed to handle low power loads and its power consumption is minimal during its operations. This makes the device ideal for applications in which low power dissipation and noise immunity are required.
In conclusion, the JANTX1N4976D is a diode-zener single, specifically designed for high-intensity inductive and capacitive loads in applications that require low power losses. It is suitable for use in a variety of switching applications, such as over-voltage protection, voltage limiting, and current limiting. It operates by allowing a small, controlled flow of current when the voltage exceeds its reverse breakdown voltage. The device is designed to handle low power loads and its power consumption is minimal during its operations. This makes it ideal for applications in which low power dissipation and noise immunity are required.
The specific data is subject to PDF, and the above content is for reference
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