JANTX1N4978C Allicdata Electronics
Allicdata Part #:

1086-18656-ND

Manufacturer Part#:

JANTX1N4978C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 68V 5W E AXIAL
More Detail: Zener Diode 68V 5W ±2% Through Hole E, Axial
DataSheet: JANTX1N4978C datasheetJANTX1N4978C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/435
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 68V
Tolerance: ±2%
Power - Max: 5W
Impedance (Max) (Zzt): 50 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 51.7V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: E, Axial
Description

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The JANTX1N4978C is a single, 500 mW, high-speed and high-temperature Zener diode developed for a variety of applications including switching induction heating systems. Designed for direct insertion into printed circuit boards, this diode utilizes gold metallization for superior heat conduction and low thermal resistance. As with all Zener diodes, the JANTX1N4978C also has a specific breakdown voltage (BV) and some useful features for applications.

Applications

The JANTX1N4978C is advantageous in a variety of applications because of its low thermal resistance, high-speed, high temperature and robust reverse voltage breakdown characteristics. The main application areas include:

  • Switching induction heating systems
  • Regulated power supply circuits
  • DC-to-DC switching converters
  • Small signal detection
  • Industrial control devices

Working Principle

Zener diodes are basically a type of diode that functions in a reverse-bias operation. In this operation, the diode is connected with the anode to a positive voltage and the cathode to a negative voltage. When the voltage exceeds the breakdown voltage which is called the "Zener Voltage", the diode will break down and begin to conduct current in the reverse direction. This reverse current then flows from the cathode to the anode. This process is used for different applications including voltage regulation and protecting circuit from overvoltage.

In the case of the JANTX1N4978C, its breakdown voltage is specified at 4.75 V, meaning it will conduct current in the reverse direction when the applied voltage reaches that level. This diode also has a series resistance of 40 ohms at 4.7V to avoid short-circuiting the circuit in case of sudden voltage spikes. The device also features a very low reverse-recovery time of 50 ns for fast switching performance in high-frequency applications.

The diode also features an operating temperature range from -65 to +150C and an impressive high power dissipation of 500 mW to handle extended pulse current applications. Additionally, the low thermal resistance of 1.5°C/W ensures steady performance even under extreme thermal conditions.

Conclusion

The JANTX1N4978C is a handy device for a number of applications where robust performance and high-temperature tolerance are required. Its gold metallization and resistivity of 40 ohms at 4.7V gives optimum protection against voltage spikes and ensure high-speed switching due to its low reverse recovery time. The 500 mW power dissipations, combined with the high-temperature of 150C and low reverse thermal resistance of 1.5°C/W makes it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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