![JANTX1N4979CUS Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 1086-18666-ND |
Manufacturer Part#: |
JANTX1N4979CUS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 75V 5W D5B |
More Detail: | Zener Diode 75V 5W ±2% Surface Mount D-5B |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/435 |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 75V |
Tolerance: | ±2% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 55 Ohms |
Current - Reverse Leakage @ Vr: | 2µA @ 56V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 1A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | E-MELF |
Supplier Device Package: | D-5B |
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The JANTX1N4979CUS is a member of the Diode-Zener-Single family. This type of diode is used to maintain a constant and relatively low-voltage level between two terminals. It is typically placed in series with a voltage supply to provide protection from overvoltage. Zener diodes are commonly used to protect the delicate parts of the circuit from spikes in power or for protection from overcharged capacitors. They can also be used to provide regulated voltage outputs.
The JANTX1N4979CUS is a 2-terminal device composed of two PN junctions. It is generally composed of silicon, but other materials such as gallium arsenide, selenium, and germanium are also used. At steady state, this device has very low leakage current, enabling it to remain in a semi-conductive state with the potential difference between the terminals very close to the breakdown voltage of the device. When a voltage higher than the breakdown voltage, called a Zener voltage, is applied, the PN junction breaks down, allowing current to flow freely, thereby maintaining a constant voltage between the two terminals. This process is known as Zener breakdown.
This particular diode has a Zener voltage of 5.6V. Above this voltage, it can conduct up to 1.2W of power, with a maximum reverse current capacitance of 100mA. The device is rated to operate over temperatures up to 175°C. This device is often used in communications and automotive applications because of its high robustness and stability with changing temperatures. It is suitable for use in high voltage and high frequency switching circuits. It is also used in digital circuits and power supplies, as well as in safety circuits.
The working principle of the JANTX1N4979CUS is based on the Zener breakdown effect. When a voltage is applied across its terminals, a breakdown voltage or Zener voltage is generated. A Zener breakdown takes place when the applied voltage is higher than the breakdown voltage and the potential across the PN junction exceeds a certain critical value. The critical value is dependant on the doping density and material composition.
When the breakdown voltage is exceeded, the PN junction begins to conduct. This creates a low resistance path so that positive current flows from the more positive terminal to the less positive terminal. This provides a constant voltage level between the two terminals. This same effect is used in applications where the Zener diode is used as a voltage regulator.
The JANTX1N4979CUS diode is an excellent choice for controlling and stabilizing power levels in a variety of applications. Its low leakage currents and temperature stability allow for reliable and consistent operation in many different environments. This device is an ideal replacement for complex linear regulators or other power conditioning systems.
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