Allicdata Part #: | 1086-2446-ND |
Manufacturer Part#: |
JANTX1N5186 |
Price: | $ 7.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 100V 3A AXIAL |
More Detail: | Diode Standard 100V 3A Through Hole |
DataSheet: | JANTX1N5186 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 6.63270 |
Series: | Military, MIL-PRF-19500/424 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 9A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 2µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | B, Axial |
Operating Temperature - Junction: | -65°C ~ 175°C |
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JANTX1N5186 is a silicon rectifier diode and belongs to the family of Diodes - Rectifiers - Single. The unit is composed of two sections that individually performs high speed switching, mixing and detection. The specific working principle of JANTX1N5186 is dependent on its various application fields and will be discussed in further detail in this article.
Application fields
The JANTX1N5186 is commonly used in a variety of electrical and electronic applications. It is an ideal choice for use in power supplies, motor drives, inverters, DC-DC converters and similar applications where reliability and fast switching is of primary importance.
It is also commonly usedin pulse-width modulator and switching regulator circuitry. Furthermore, it is also found in various analog and digital logic circuits, and in power semiconductor devices such as triacs and thyristors. The JANTX1N5186 can carry up to 3 Amps of continuous current and up to 6 Amps of transient (surge) current.
Working principle
The JANTX1N5186 operates on a principle based on the decrease in voltage across the diode when a forward current is allowed to pass through it. The forward voltage drop of the diode occurs when the current through the anode and cathode terminals is allowed to flow in a certain direction. When the potential difference is applied to the diode, the current will flow in the direction which is dependent on the polarity of the voltage.
When the cathode terminal is at a higher voltage (positive) with respect to the anode terminal (negative), this causes the current to flow from the cathode to the anode. Conversely, when the cathode is at a lower voltage (negative) with respect to the anode terminal (positive), this causes a current to flow from the anode to the cathode. It is this difference in voltage, combined with the current flow, that produces an increase in voltage across the diode.
In addition to the forward voltage drop of the diode, the JANTX1N5186 also permit high speed switching operations. This is achieved by the special design of the diode which results in fast rise and fall times, allowing for operations at high switching speeds. The diode also exhibits a small forward voltage drop, which is desirable in many devices where power efficiency is of paramount concern.
Conclusion
In conclusion, the JANTX1N5186 is a versatile silicon rectifier diode that is capable of performing high speed switching operations in a wide range of applications. It is commonly used for pulse-width modulator and switching regulator circuitry, and also in various analog and digital logic circuits, as well as in power semiconductor devices such as triacs and thyristors. The JANTX1N5186 has a forward voltage drop of 0.75V and can carry up to 3 Amps of continuous current and up to 6 Amps of transient (surge) current.
The specific data is subject to PDF, and the above content is for reference
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