JANTX1N5417 Allicdata Electronics
Allicdata Part #:

1086-2450-ND

Manufacturer Part#:

JANTX1N5417

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 200V 3A AXIAL
More Detail: Diode Standard 200V 3A Through Hole
DataSheet: JANTX1N5417 datasheetJANTX1N5417 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Military, MIL-PRF-19500/411
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Description

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  • Diodes - Rectifiers - Single
    • JANTX1N5417 Application Field and Working Principle
      • Introduction
      • JANTX1N5417 is a silicon rectifier with high current capability, high surge current loading capability and low VF. The package is 217 (SMA). This device, which is primarily intended for general-purpose rectification applications, has temperature and surge current ratings far superior to two or four ordinary rectifiers connected in parallel.

      • Application Field
      • The JANTX1N5417 is widely used in the industrial, automotive, communications and consumer electronics fields. It is widely used as an AC-DC rectifier, reverse polarity protection, high power DC-DC regulators, switching converters, and other applications where the rectifying element needs to hold high current for periods of extended duration.

      • Working Principle
      • The JANTX1N5417 is a diode which works on the principle of P-N junction. It consists of two semiconductor materials, one doped with phosphorus (positive P-zone) and the other is doped with boron (negative N-zone). These two materials form the junction when connected together. When a training voltage is applied across this junction, it causes electrons to move from one material to the other resulting in the formation of an electric charge. This charge then constitutes the working property of the device. When the voltage applied to the junction is reversed, the electrons are forced back to their original positions and the charge dissipates.

        The basic construction of JANTX1N5417 is such that the semiconductor materials are sandwiched to form four layers – two of P-zone material, one of N-zone material, and one of metal. When a forward current is applied, the charge originating at the P-zone is reversed and moves through the N-zone material, creating a diode junction. The metal serves as the conduit for the charge to move from one layer to the other.

        The JANTX1N5417 is capable of handling high current for extended periods of time due to its low forward voltage drop. Its low power dissipation and its high surge current rating also make it ideal for a variety of high power applications.

      • Conclusion
      • In conclusion, the JANTX1N5417 is an excellent diode with high current capability, high surge current loading capability, and low forward voltage. Its wide range of applications in various industrial, automotive, communications and consumer electronics fields have made it an indispensable component in today’s modern society.

    The specific data is subject to PDF, and the above content is for reference

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