Allicdata Part #: | 1086-2450-ND |
Manufacturer Part#: |
JANTX1N5417 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 200V 3A AXIAL |
More Detail: | Diode Standard 200V 3A Through Hole |
DataSheet: | JANTX1N5417 Datasheet/PDF |
Quantity: | 1000 |
Series: | Military, MIL-PRF-19500/411 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 9A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 1µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | B, Axial |
Operating Temperature - Junction: | -65°C ~ 175°C |
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- Diodes - Rectifiers - Single
- JANTX1N5417 Application Field and Working Principle
- Introduction
- Application Field
- Working Principle
- Conclusion
JANTX1N5417 is a silicon rectifier with high current capability, high surge current loading capability and low VF. The package is 217 (SMA). This device, which is primarily intended for general-purpose rectification applications, has temperature and surge current ratings far superior to two or four ordinary rectifiers connected in parallel.
The JANTX1N5417 is widely used in the industrial, automotive, communications and consumer electronics fields. It is widely used as an AC-DC rectifier, reverse polarity protection, high power DC-DC regulators, switching converters, and other applications where the rectifying element needs to hold high current for periods of extended duration.
The JANTX1N5417 is a diode which works on the principle of P-N junction. It consists of two semiconductor materials, one doped with phosphorus (positive P-zone) and the other is doped with boron (negative N-zone). These two materials form the junction when connected together. When a training voltage is applied across this junction, it causes electrons to move from one material to the other resulting in the formation of an electric charge. This charge then constitutes the working property of the device. When the voltage applied to the junction is reversed, the electrons are forced back to their original positions and the charge dissipates.
The basic construction of JANTX1N5417 is such that the semiconductor materials are sandwiched to form four layers – two of P-zone material, one of N-zone material, and one of metal. When a forward current is applied, the charge originating at the P-zone is reversed and moves through the N-zone material, creating a diode junction. The metal serves as the conduit for the charge to move from one layer to the other.
The JANTX1N5417 is capable of handling high current for extended periods of time due to its low forward voltage drop. Its low power dissipation and its high surge current rating also make it ideal for a variety of high power applications.
In conclusion, the JANTX1N5417 is an excellent diode with high current capability, high surge current loading capability, and low forward voltage. Its wide range of applications in various industrial, automotive, communications and consumer electronics fields have made it an indispensable component in today’s modern society.
The specific data is subject to PDF, and the above content is for reference
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