Allicdata Part #: | JANTX1N5802S-ND |
Manufacturer Part#: |
JANTX1N5802 |
Price: | $ 6.89 |
Product Category: | Uncategorized |
Manufacturer: | Semtech Corporation |
Short Description: | D MET 2.5A SFST 50V HR 2FFX |
More Detail: | N/A |
DataSheet: | JANTX1N5802 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 6.26475 |
Specifications
Series: | * |
Part Status: | Active |
Description
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The JANTX1N5802 is a high-voltage, high-efficiency, low-cost MOSFET device used in many applications. It can be used in a variety of applications, including driving light bulbs and motors, as well as providing power to microprocessors. The device has the capability to switch heavy loads in a fast response, with an unsurpassed timing accuracy and protection features. The device consists of a Silicon MOSFET with lateral (voltage) enhancement, which provides high current-handling capability and low on-resistance. Its output is capable of handling voltages up to 50 volts and currents up to 1 Amp. It is designed to be used in low-voltage and high-current applications, such as switching power electronics. The unique MOSFET structure shown in Figure 1 provides high-speed switching performance, low on-resistance, and excellent thermal management properties. The device is protected against overvoltage, over current, and reverse voltage. It also has a low standby current and low power loss. The JANTX1N5802 is designed to be used in a wide variety of applications, from industrial and automotive to consumer products. Examples of applications for the device include LED lighting, light controllers, motor speed controllers, microprocessor power supplies, and low-voltage switch-mode power electronics. In terms of its working principle, the device uses the PN junction diode structure to control any voltage applied to its gate, allowing the flow of current through the device. The JANTX1N5802 is a four-terminal device, with drain, source, gate, and substrate terminals. When a voltage is applied to the gate terminal, the drain and source terminals will be turned “on” and “off” in accordance with the applied voltage.During operation, when the device is on, an electric field will form around the gate, with the electric field of the drain and source being transmitted to the substrate through the gate. This creates a first-order, non-linear device, which acts to control the current flowing between the drain and source terminals, and is capable of rapidly switching on and off.The characteristics of the device increase as the voltage applied to the gate increases, resulting in higher current ratings. At any given voltage, the device can switch large currents at high speed with low power loss. The device also exhibits extremely low leakage over a wide range of temperatures and voltages due to its excellent thermal management and protection features. The JANTX1N5802 is an excellent choice for a wide range of applications, from automotive to consumer products, which require high-speed switching performance, low on-resistance, and excellent protection features. This device offers a reliable and cost-effective solution for many applications.The specific data is subject to PDF, and the above content is for reference
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