Allicdata Part #: | JANTX1N6102AUS-ND |
Manufacturer Part#: |
JANTX1N6102AUS |
Price: | $ 14.21 |
Product Category: | Uncategorized |
Manufacturer: | Semtech Corporation |
Short Description: | T MET BI 500W 6.8V SM |
More Detail: | N/A |
DataSheet: | JANTX1N6102AUS Datasheet/PDF |
Quantity: | 1000 |
150 +: | $ 12.91840 |
Series: | * |
Part Status: | Active |
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JANTX1N6102AUS Application Field and Working Principle
A JANTX1N6102AUS is a Field-Effect Transistor (FET) and is most widely used in a variety of electronic circuits and devices. It is often the most inexpensive type of transistor available on the market since it can be mass-produced easily and cost-effectively.
The FET is a three-terminal semiconductor device made from a highly conductive material such as silicon. It consists of two terminals (Source and Drain) and a gate terminal which control the flow of electric current. When the gate is at a positive voltage, electric current flows from the source to the drain. When the gate is at a negative voltage, current does not flow.
The JANTX1N6102AUS is a high voltage FET that has a breakdown voltage of 30V and a drain-source voltage of 30V. It is useful for high voltage applications such as voltage regulators, switch-mode power supplies, and audio power amplifiers.
A JANTX1N6102AUS transistor has an insulated-gate field-effect structure and features self-latching, over-voltage, and temperture-safe operation. It can operate from extremely low to very high input voltages and can handle currents up to 50 A. It is highly reliable and can withstand a wide range of temperatures, temperatures shifts, and burn-in tests.
The operating principle of the JANTX1N6102AUS FET is based on the electrostatic field which is formed between the gate and the source terminals. When a voltage is applied to the gate terminal, it creates an electric field which in turn changes the conductivity of the device depending on the voltage applied. This allows current to flow through it when the voltage is applied.
One of the major advantages of the JANTX1N6102AUS FET is that it has the ability to switch very quickly. This is due to the very thin oxide layer that is created at the gate-source junction. This oxide layer is very thin and can be switched on and off very rapidly.
The JANTX1N6102AUS FET is also widely used in power management applications such as digital controllers, DC-to-DC converters, and LED drivers. This type of transistor is also used in switching applications, including electronic ballasts, lighting controls, and motor drives.
The JANTX1N6102AUS field-effect transistor is ideal for a wide range of high voltage applications. It is capable of operating in high temperature environments while offering reliable performance with low power consumption. It also has high speed switching capabilities, making it an excellent choice for power supply and high-speed applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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JANTXV1N6141A | Microsemi Co... | 38.35 $ | 1000 | TVS DIODE 6.9V 13.4V C AX... |
JANTX1N6103A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.7V 11.2V AXIA... |
JANTX1N6103US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.7V 11.76V B S... |
JANTX1N6104 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.71V AXI... |
JANTX1N6104A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.1V AXIA... |
JANTX1N6104AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.1V B SQ... |
JANTX1N6105 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V AXI... |
JANTX1N6105AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 13.4V B SQ... |
JANTX1N6105US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V B S... |
JANTX1N6106 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 15.23V AXI... |
JANTX1N6106AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 14.5V B SQ... |
JANTX1N6107 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V AXI... |
JANTX1N6107A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V AXIA... |
JANTX1N6107AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V B SQ... |
JANTX1N6107US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V B S... |
JANTX1N6108 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V AXI... |
JANTX1N6108A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V AXIA... |
JANTX1N6108AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V B SQ... |
JANTX1N6108US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V B S... |
JANTX1N6109 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 19.11V AXI... |
JANTX1N6109A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 18.2V AXIA... |
JANTX1N6110 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V AX... |
JANTX1N6110US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V B ... |
JANTX1N6111 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V AX... |
JANTX1N6111A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V AXI... |
JANTX1N6111AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V B S... |
JANTX1N6111US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V B ... |
JANTX1N6112 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V AX... |
JANTX1N6112AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 25.1V B S... |
JANTX1N6112US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V B ... |
JANTX1N6113 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 29.09V AX... |
JANTX1N6113A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 27.7V AXI... |
JANTX1N6114 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V AX... |
JANTX1N6114US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V B ... |
JANTX1N6115 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V AX... |
JANTX1N6115A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V AXI... |
JANTX1N6115AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V B S... |
JANTX1N6115US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V B ... |
JANTX1N6116 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V AX... |
JANTX1N6116AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 37.4V B S... |
DIODE GENERAL PURPOSE TO220
CB 6C 6#16 SKT RECP
CA08COME36-3PB-44
CA-BAYONET
CB 6C 6#16S SKT PLUG
CAC 3C 3#16S SKT RECP LINE