JANTX1N6102AUS Allicdata Electronics
Allicdata Part #:

JANTX1N6102AUS-ND

Manufacturer Part#:

JANTX1N6102AUS

Price: $ 14.21
Product Category:

Uncategorized

Manufacturer: Semtech Corporation
Short Description: T MET BI 500W 6.8V SM
More Detail: N/A
DataSheet: JANTX1N6102AUS datasheetJANTX1N6102AUS Datasheet/PDF
Quantity: 1000
150 +: $ 12.91840
Stock 1000Can Ship Immediately
$ 14.21
Specifications
Series: *
Part Status: Active
Description

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JANTX1N6102AUS Application Field and Working Principle

A JANTX1N6102AUS is a Field-Effect Transistor (FET) and is most widely used in a variety of electronic circuits and devices. It is often the most inexpensive type of transistor available on the market since it can be mass-produced easily and cost-effectively.

The FET is a three-terminal semiconductor device made from a highly conductive material such as silicon. It consists of two terminals (Source and Drain) and a gate terminal which control the flow of electric current. When the gate is at a positive voltage, electric current flows from the source to the drain. When the gate is at a negative voltage, current does not flow.

The JANTX1N6102AUS is a high voltage FET that has a breakdown voltage of 30V and a drain-source voltage of 30V. It is useful for high voltage applications such as voltage regulators, switch-mode power supplies, and audio power amplifiers.

A JANTX1N6102AUS transistor has an insulated-gate field-effect structure and features self-latching, over-voltage, and temperture-safe operation. It can operate from extremely low to very high input voltages and can handle currents up to 50 A. It is highly reliable and can withstand a wide range of temperatures, temperatures shifts, and burn-in tests.

The operating principle of the JANTX1N6102AUS FET is based on the electrostatic field which is formed between the gate and the source terminals. When a voltage is applied to the gate terminal, it creates an electric field which in turn changes the conductivity of the device depending on the voltage applied. This allows current to flow through it when the voltage is applied.

One of the major advantages of the JANTX1N6102AUS FET is that it has the ability to switch very quickly. This is due to the very thin oxide layer that is created at the gate-source junction. This oxide layer is very thin and can be switched on and off very rapidly.

The JANTX1N6102AUS FET is also widely used in power management applications such as digital controllers, DC-to-DC converters, and LED drivers. This type of transistor is also used in switching applications, including electronic ballasts, lighting controls, and motor drives.

The JANTX1N6102AUS field-effect transistor is ideal for a wide range of high voltage applications. It is capable of operating in high temperature environments while offering reliable performance with low power consumption. It also has high speed switching capabilities, making it an excellent choice for power supply and high-speed applications.

The specific data is subject to PDF, and the above content is for reference

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