JANTX1N6324US

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Diodes - Zener - Single: JANTX1N6324US Application Field and Working Principle

JANTX1N6324US is a single Zener diode manufactured by Microsemi with a nominal breakdown voltage of 6.3V and a power dissipation rating of 500mW. The device provides tight voltage regulation, low leakage current, and low thermal resistance. It is well suited for applications such as voltage regulation, voltage clamping and protection, and digital logic level conversion.

A Zener diode is essentially a diode in reverse bias, with breakdown voltage occurring somewhere below the forward voltage. If the voltage across the diode exceeds the predetermined Zener voltage, a large surge of current will flow in the reverse direction. This current is called the Zener breakdown current, or the Zener current. This current maintains the voltage across the diode at or near the Zener voltage, and is defined by the equation I = KV², where K is an empirical constant.

Generally, the breakdown voltage of Zener diodes is temperature-dependent and has a wide tolerance. The JANTX1N6324US is designed to have a breakdown voltage of 6.3V with a tight tolerance of +/-15%, as well as low temperature coefficient of 60mV/°C. Its reverse leakage current is also specified to be very low, at 100nA maximum at 25°C.

When used in applications, the Zener diode allows current to flow in either direction when the applied voltage is below the Zener voltage. When the voltage exceeds the Zener voltage, the breakdown current, or Zener current, will pass through the diode, limiting the voltage across it to approximately the Zener voltage. This ensures that the voltage applied to the diode is kept constant and prevents voltage fluctuations from damaging the circuit.

The JANTX1N6324US is well suited for use in voltage regulation and protection circuits. It can be used to protect sensitive electronic components from overvoltage or to provide a reference voltage. In addition to the added protection, the diode also provides fast response times, low thermal resistance and low leakage current. The device is rated at 500mW, allowing it to provide sufficient power dissipation when used in applications with heavy switching and transient voltage surges.

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