JANTX1N6474 Circuit Protection |
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Allicdata Part #: | 1086-2639-ND |
Manufacturer Part#: |
JANTX1N6474 |
Price: | $ 16.62 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 30.5V 47.5V AXIAL |
More Detail: | N/A |
DataSheet: | JANTX1N6474 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 15.11020 |
Voltage - Clamping (Max) @ Ipp: | 47.5V |
Supplier Device Package: | Axial |
Package / Case: | G, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 181A (8/20µs) |
Series: | Military, MIL-PRF-19500/552 |
Voltage - Breakdown (Min): | 33V |
Voltage - Reverse Standoff (Typ): | 30.5V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS-Diodes are devices used in a variety of applications, and the JANTX1N6474 is a versatile type of TVS-Diode that can handle a variety of functions. This particular diode is a specialized type of TVS-Diode, designed for protection against overvoltage, specifically for Radio Frequency (RF) applications. To understand the specific application field and working principle better, an overview of the device will be useful.
The JANTX1N6474 TVS-Diode is a type of bidirectional overvoltage device designed to protect sensitive equipment from the damaging effects of overvoltage conditions. The device encompasses two zener diodes configured in a common cathode configuration, which enables it to act as a bidirectional protection device capable of suppressing both positive and negative transients. This makes the device exceptionally versatile in terms of its ability to protect both power and signal lines, as well as the two directions in which those lines are commonly connected.
The device features a two-stage stack for enhanced surge integration, allowing it to provide robust protection against destructive power surges and other overvoltage transients. The device is also designed for low capacitance, a low junction capacitance that enhances its ability to handle RF applications with an exceptional performance at high frequencies. The device is also designed to be physically small, with SMA (squaline) and SOD123 packages, making it suitable for use in a wide range of applications, including portable and handheld devices.
The working principle of the device is fairly straightforward. In normal operating conditions, the device behaves like a standard diode, blocking reverse current and allowing forward current to pass. When an overvoltage transient occurs, the first stage of the device triggers, providing a rapid decoupling path for the transient energy and suppressing subsequent overvoltage. This helps to ensure that the components in the circuit are not damaged by any surge or transient that could otherwise cause them to be damaged. The second stage of the device then works to suppress any remaining high-energy transients further, providing an enhanced level of protection.
The JANTX1N6474 is an ideal device for a variety of applications, including RF circuit protection and DC power conditioning. The device\'s low junction capacitance and two-stage stack design make it well suited for radio frequency applications, while its small size makes it suitable for use in portable and handheld devices. The device is also compatible with a range of voltage levels, making it an excellent choice for protecting against both positive and negative overvoltage transients. In short, the JANTX1N6474 is an extremely versatile TVS-Diode that provides robust and reliable protection for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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