JANTX1N6475 Circuit Protection |
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Allicdata Part #: | 1086-2641-ND |
Manufacturer Part#: |
JANTX1N6475 |
Price: | $ 16.62 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 40.3V 63.5V AXIAL |
More Detail: | N/A |
DataSheet: | JANTX1N6475 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 15.11020 |
Voltage - Clamping (Max) @ Ipp: | 63.5V |
Supplier Device Package: | Axial |
Package / Case: | G, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 135A (8/20µs) |
Series: | Military, MIL-PRF-19500/552 |
Voltage - Breakdown (Min): | 43.7V |
Voltage - Reverse Standoff (Typ): | 40.3V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS (Transient Voltage Suppressor) diodes are widely used electrical components that provide protection for electronic circuits exposed to unpredictable and potentially hazardous electrical air disturbances. The JANTX1N6475 is a type of TVS diode and is most commonly used to protect electronic components against unwanted voltage-transient conditions.
The JANTX1N6475 is a reverse-biased diode capable of blocking and suppressing voltage spikes that may occur due to voltage transients and ESD (electrostatic discharge). This diode can protect a wide range of integrated circuits from strong voltage transients and voltage spikes. It is also used for protecting against ESD or EFT (electrical fast transients) events, which may cause severe damage to sensitive digital electronics if not addressed.
Typically, the JANTX1N6475 has a peak pulse power rating of 500W and is capable of suppressing transient voltage up to 8kV. It has a low reverse leakage current, typically max 3mA, and low clamping voltage, typically max 17V, allowing them to provide excellent protection for delicate electronic components. Its small size, 6.2mm x 4.2mm x 1.7mm, makes it ideally suited for use in portable electronics such as laptops, cell phones, and MP3 players.
The JANTX1N6475 is designed to operate in a variety of conditions from a wide range of temperature to high humidity levels. Its maximum junction temperature is 125°C and its packaging can withstand temperatures from -65°C to +150°C. This makes it particularly well suited for applications in extreme environments such as those found in the automotive industry.
This device is able to operate by using a principle known as avalanche breakdown. When exposed to a voltage greater than its breakdown voltage, the electric field in the device will become strong enough to cause a free electron to gain enough energy to gain kinetic energy and impact an already existing electron. This impacts a second electron which will in turn affect another electron in what is known as an avalanche of electrons. This will generate enough charge to limit the voltage rise on the opposing side of the device, thus suppressing the voltage spike.
The JANTX1N6475 is an ideal choice when it comes to providing over-voltage protection for sensitive circuits. The device is capable of handling more transient energy and peak current than many other TVS diodes, making it an ideal choice for automotive applications, as well any application where reliable and robust ESD or EFT protection is a must.
The specific data is subject to PDF, and the above content is for reference
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