JANTX2N2907AUA/TR Allicdata Electronics
Allicdata Part #:

JANTX2N2907AUA/TR-ND

Manufacturer Part#:

JANTX2N2907AUA/TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: SMALL-SIGNAL BJT
More Detail: Bipolar (BJT) Transistor PNP 60V 600mA 1.8W Surfa...
DataSheet: JANTX2N2907AUA/TR datasheetJANTX2N2907AUA/TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/291
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.8W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA
Description

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The JANTX2N2907AUA/TR is a single-stage transistor in the category of bipolar transistors (BJT) and represents an important element of any electronics system due to its various applications.

The JANTX2N2907AUA/TR has a maximum collector current which divides between two classes of 16A and 7.5A depending on the type of maximum rating. It also has a high power dissipation making it suitable for applications such as SMPS,power amplifier, switching regulators, AC to DC converters, DC to DC converters, RF amplifiers and power line drivers.

It has a hFE of approximately 600 and a beta cutoff frequency of 250MHz. It also has a DC MAX Collector power dissipation as high as 25W, with a maximum collector-base voltage of 40V, a maximum collector-emitter voltage of 25V, and a maximum emitter-base voltage of 5V.

The JANTX2N2907AUA/TR has the characteristic of a low voltage, high frequency PNP transistor, thereby making it suitable for high frequency switching applications and circuits requiring low forward voltage drop. It is capable of driving large currents at high frequencies with high gain, because of its low capacitance, enabling it to handle high power, while also providing excellent switching characteristics.

The JANTX2N2907AUA/TR is typically used in dc-dc converters, RF power amplifiers and switching regulators, as well as audio amplifiers, cut-off and linear amplifiers, oscillators and noise suppressors, among other applications where it can improve circuit effectiveness and performance.

The working principle of the JANTX2N2907AUA/TR is quite straightforward, due to the fact that it is a bipolar junction transistor. Its working principle is based on the fact that when voltage is applied, a charge flows between the base and collector and between the emitter and collector. This charge is the flow of electrons, which results in current through the transistor. This charge is also responsible for the amplification of the signal, as a result of the current, which is in turn divided by the base-emitter current gain (hFE).

The JANTX2N2907AUA/TR is able to achieve high voltage and current amplification and switching, thanks to its low capacitance and low forward voltage drop, that enable it to operate at high frequencies. Moreover, the elevated collector current and power dissipation of the JANTX2N2907AUA/TR give it extra performance and capabilities over other similar transistors.

In summary, the JANTX2N2907AUA/TR is a high power, high speed PNP transistor that is capable of driving large currents at high frequencies withhigh gain, due to its low capacitance and low forward voltage drop. This makes it ideal for applications such as audio amplifiers, high frequency switching, and dc-dc converters, as well as other circuits requiring stable operation at high power and frequency. The working principle of the JANTX2N2907AUA/TR is based on the flow of electrons between the base and collector and between the emitter and collector, which generates current that is divided by the base-emitter current gain (hFE). As a result, the JANTX2N2907AUA/TR is capable of providing excellent switching and amplifying capabilities with high performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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