Allicdata Part #: | 1086-15502-ND |
Manufacturer Part#: |
JANTX2N3055 |
Price: | $ 52.66 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 70V 15A TO-3 |
More Detail: | Bipolar (BJT) Transistor NPN 70V 15A 6W Through H... |
DataSheet: | JANTX2N3055 Datasheet/PDF |
Quantity: | 6 |
1 +: | $ 47.87370 |
Series: | Military, MIL-PRF-19500/407 |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 70V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 3.3A, 10A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 4A, 4V |
Power - Max: | 6W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-3 (TO-204AA) |
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The JANTX2N3055 is a high-voltage, high-speed switching device for use in switching applications such as high-voltageline-operated switchmode power supplies, auto-sensing and programmable-electronics. It is also used in many other applications, including switchmode current modulator circuits, relay drivers, motor control and buck circuits. The JANTX2N3055 offers both high isolation and high switching speeds with low power dissipation. It is available in an industry-standard transistor outline.
The JANTX2N3055 belongs to the family of bipolar junction transistors (BJT). A BJT is a device that has three semiconductor layers, usually made of either silicon or germanium, that are arranged in two "junctions": a collector-base junction and a base-emitter junction. BJTs are made from the principle of two diodes joined back-to-back. BJTs are used to amplify signals and switch applications, as well as generate high-power signals.
In a BJT, the collector-base junction acts as a switch, allowing current to flow between the collector and base when it is turned on. This current is known as "collector current." The base-emitter junction, on the other hand, acts as an amplifier, allowing current to flow from the emitter to the base when the base-emitter voltage is increased. This current is known as "emitter current."
The JANTX2N3055 is a high voltage, high speed switching device with a fully insulated 150 V minimum breakdown high isolation junction between the collector and substrate. It is also designed for a high current gain of 1000 and a high-speed switching capability of up to 250 kHz.
The device features an integrated tunnel diode for the base-emitter reverse bias junction, which allows for higher mA capability. The device is also designed for low susceptibility to latch-up and radiation susceptibility.
The JANTX2N3055 is composed of a PNP (N-type) transistor and an NPN (P-type) transistor. In its basic operation as a switch, current flows from the collector to the emitter when the base is suitably biased. If the base is connected to ground, then the collector-emitter path is blocked, and no current flows.
When used in switching applications, the JANTX2N3055 is able to provide significant power savings and improved system reliability. This is because the device quickly turns off when the base current is removed, meaning that no current is supplied to the load and thus power is not wasted. This property makes the JANTX2N3055 an extremely versatile switching device for various applications.
In addition, the device has an internal thermal protection, which limits current in the event of thermal overload. This further improves the device\'s safety and reliability, and minimizes the need for external heat-sinking. The device is also capable of soft-start and regeneration protection, improving application safety and system reliability.
The JANTX2N3055 is an ideal device for a wide range of switching applications, including automotive, industrial, consumer, and medical electronics. It can provide improved system reliability and power savings in these applications and many more.
The specific data is subject to PDF, and the above content is for reference
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