JANTX2N3057A Allicdata Electronics
Allicdata Part #:

1086-2694-ND

Manufacturer Part#:

JANTX2N3057A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 80V 1A
More Detail: Bipolar (BJT) Transistor NPN 80V 1A 500mW Through...
DataSheet: JANTX2N3057A datasheetJANTX2N3057A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/391
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Power - Max: 500mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46
Description

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The JANTX2N3057A is a high-performance germanium bipolar transistor produced by Central Semiconductor. It is designed forlow-power RF, IF, and microwave mixer and oscillator applications, and is part of the JANTX2N series. It is a single-transistor device that combines the features of a low-noise amplifier, mixer, and oscillator in one compact package. The JANTX2N3057A has a wide frequency response, high operating temperature range, and excellent thermal performance. It is offered in a 4-lead low-profile SOT-23 package or in a 7-pin μBGA (Micro Ball Grid Array) package.

The JANTX2N3057A is a N-channel bipolar junction transistor (BJT). It is also referred to as a single-transistor device. This type of transistor is a three-terminal device, with an electrical connection from each terminal to the other two. Current flows from the collector to the emitter, allowing both current amplification and voltage control. This type of transistor is commonly used for low-power RF, IF, and microwave mixers and oscillator applications.

The JANTX2N3057A is designed for applications requiring low noise amplifiers, mixers, and oscillators. It has a wide frequency response range, high operating temperature range, and excellent thermal performance. It also has a high power gain of 10 mA/V and a low noise figure of 1.7 dB. The JANTX2N3057A is ideal for use in communications, sensor systems, instrumentation, and other RF applications.

The working principle of the JANTX2N3057A is based on the tunneling effect. When a current is passed through the base-emitter junction, electrons are able to tunnel from the emitter region to the collector region. This tunneling process causes an amplification of the input current and a corresponding change in the output voltage. This makes the JANTX2N3057A a useful device for amplifier, mixer, and oscillator applications.

The JANTX2N3057A is a versatile device that can be used in a variety of applications. It is suitable for use in automotive, telecom, and industrial applications, as well as in consumer electronics. It is also suitable for use in instrumentation and RF test equipment, as well as filters and detectors. The JANTX2N3057A is an excellent choice for low power, low noise amplifiers, mixers, and oscillators in the GHz frequency range.

The specific data is subject to PDF, and the above content is for reference

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