JANTX2N3439L

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The JANTX2N3439L is an NPN Bipolar Junction Transistor (BJT) with a Low Current at a High Gain. It is a 500mA, 40V DC current gain of 40 (typical). This transistor is manufactured by Central Semiconductor and is ideal for a wide range of applications, including low-noise audio amplifiers, power switching circuits, and low-level power amplifiers.

The JANTX2N3439L is a single polar transistor with an N-channel construction. It has a dimension of 0.9mm max and consists of a three-lead EpiCase™ package. This device is constructed by using an N-type substrate in which two P-type emitter layers to form a p–n–p junction and two N-type collector layers are formed to form an n–p–n junction. It is designed to be disabled by taking the base current of 75 µA below 0.2mA. It is also designed to be enabled at 7mA of current and VCBO of 20V (one diode voltage drop).

The JANTX2N3439L is designed to operate at a maximum frequency of 50MHz. It has high gain (hFE) and low saturation voltage, along with a wide range of input bias current, making it an ideal choice for low-level electronic applications. Additionally, its structure exhibits a low reverse current when in the ‘off’ state, allowing it to be used in reverse polarity circuits.

The general purpose of a BJT is to amplify current or voltage signals. The JANTX2N3439L is no different; it amplifies current and/or voltage signals by using the base current, collector current, and emitter current. The three current and voltage components of a transistor are referred to as I B (base current), I C (collector current), and I E (emitter current).

The key feature of the JANTX2N3439L is its wide range of application fields. It is suitable for use in low-noise audio amplifiers, power switching circuits, and low-level power switching amplifiers. The JANTX2N3439L is also commonly used in applications such as computer peripherals, infrared detectors, wireless communication systems, and LED circuits.

In terms of its working principle, BJTs can be switched between two states - on and off. When a BJT is switched on, it acts as a closed switch and allows the current to flow from the collector to the emitter. When a BJT is switched off, it acts as an open switch, blocking the current between the collector and the emitter, thus turning the circuit off.

The JANTX2N3439L is designed to operate in both the on and off states. This is accomplished by controlling the current flow through the device. When a base current is applied to the device, it will turn on and the current will flow between the collector and emitter. When the base current is reduced, the device will turn off and the current flow through the device will be blocked. This working principle makes the JANTX2N3439L an ideal choice for switching and amplification in low-level electronic applications.

In conclusion, the JANTX2N3439L is an ideal low current at high gain NPN Bipolar Junction Transistor (BJT) manufactured by Central Semiconductor. The device is constructed using an N-type substrate and two P-type emitter layers, and it is designed to operate at a maximum frequency of 50MHz. The JANTX2N3439L has a low current at a high gain and is suitable for a wide range of applications, including low-noise audio amplifiers, power switching circuits, and low-level power switching amplifiers. The working principle of the device is based on the control of current flow and it can be used in both on and off states.

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