Allicdata Part #: | 1086-15504-ND |
Manufacturer Part#: |
JANTX2N3439UA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 350V 1A UA |
More Detail: | Bipolar (BJT) Transistor NPN 350V 1A 800mW Surfac... |
DataSheet: | JANTX2N3439UA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/368 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 350V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 4mA, 50mA |
Current - Collector Cutoff (Max): | 2µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 20mA, 10V |
Power - Max: | 800mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-SMD, No Lead |
Supplier Device Package: | UA |
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The JANTX2N3439UA transistor is a type of bipolar junction transistor, specifically classified under the category of Single. It is important to understand many features and specifications of the device before applying it in any application. This article provides an overview of the application field and working principle of the JANTX2N3439UA transistor.
Application
The JANTX2N3439UA transistor is typically used for medium-power linear and switching applications. Its Collector - Emitter Voltage (VCE) is 30V and Collector - Base Voltage (VCB) is 60V, which makes it suitable for use in applications requiring medium-level breakdown voltages. It is also a fast device, which means it can be used for switching and high-frequency applications where fast voltage transition is needed. One of the main advantages of the device is that it has low power and thermal dissipation. This makes it ideal for use in applications requiring low power consumption, such as in PAs (power amplifiers) and RF (radio frequency) and communication circuits.
The JANTX2N3439UA transistor also has good gain-bandwidth product capability and can have linear behaviors, which makes it suitable for use in amplifiers requiring high gain, such as amplifiers used in high gain drive applications. The device is also well suited to use in low noise and low distortion applications, such as audio amplifiers.
Working Principle
The JANTX2N3439UA transistor is a three-terminal active electronic device that utilizes a Bipolar Junction Transistor (BJT) circuit configuration. BJTs are configured as current-controlled (or current-regulating) semiconductor devices, in which the current flowing between the base and collector terminals is regulated by the amount of current flowing in the base-emitter junction. The base current is generally controlled by an externally applied external signal, and the current flow can be increased or decreased by altering the signal.
The amount of current flow essentially controls the Collector - Emitter Voltage (VCE) from the collector to the emitter, and this voltage can be modulated by altering the base current. The current flow can be switched "on" or "off" by applying a proper bias to the gate of the transistor, thus enabling the device to be used in switching applications. The base-emitter and collector-base junctions of the BJT also act as capacitors, allowing the device to be used in high-frequency applications requiring fast voltage transition.
The JANTX2N3439UA transistor is a rugged, versatile device that can be used in a wide variety of applications. It is a commonly used type of BJT, and having a good understanding of its features and specifications is essential in order to ensure successful application and reliable performance.
The specific data is subject to PDF, and the above content is for reference
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