Allicdata Part #: | 1086-2702-ND |
Manufacturer Part#: |
JANTX2N3501UB |
Price: | $ 18.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 150V 0.3A |
More Detail: | Bipolar (BJT) Transistor NPN 150V 300mA 500mW Sur... |
DataSheet: | JANTX2N3501UB Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 17.25080 |
Series: | Military, MIL-PRF-19500/366 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 15mA, 150mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | UB |
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- JANTX2N3501UB Application Field and Working Principle
The JANTX2N3501UB is a transistor made by the semiconductor company, Microsemi Corporation, specifically designed to be used as a switch and amplifier circuit element, as well as an active suppressor in circuits. The JANTX2N3501UB is a type of bipolar junction transistor (BJT), which means it is composed of three terminals, collector, base and emitter, and can be operated as a current-controlled device. Its useful features include its capability to amplify signals, switch from one state to another and control power supply currents.
In terms of application fields, this type of BJT is widely used in general purpose amplifiers, power management circuits and logic circuits. Specifically, it is used as a switch in power supply circuits, as a logic circuit in robotic systems and as a low-noise amplifier in audio or medical systems. Also, the JANTX2N3501UB can be used to modulate power in FET circuits and as a voltage regulator in LED drivers.
To understand how BJTs, such as the JANTX2N3501UB, work, one must first familiarize oneself with the physics of a p-n junction. In this type of junction, current is allowed to flow through the combined region when it is forward-biased, that is when a positive voltage is applied between the p-type and n-type regions. On the other hand, reverse-bias occurs when a negative voltage is applied between the two types, and this interrupt the flow of current.
The JANTX2N3501UB bipolar junction transistor (BJT) utilizes the working principle of a p-n junction to amplify, control and switch signals. Like any other BJT, it consists of three terminals – base, collector, and emitter. The base serves as the input, while the collector and emitter are the output. When a voltage is applied to the base, the p-n junction generates additional carriers in the region of the base. These carriers are then forced to move towards the emitter region. In the emitter, a forward-bias stimulates electrons that allow current flow from the emitter to the collector. That is how the BJT amplifies the input signal and works as a switch.
In summary, the JANTX2N3501UB is a bipolar junction transistor developed by Microsemi Corporation that can be used in a variety of applications such as power supply switching, logic circuits, and amplifiers. Its useful features come from its ability to use the working principle of a p-n junction to amplify signals, control power supply currents and switch from one state to another. Thanks to these features, the JANTX2N3501UB can be used in general purpose amplifier systems, robotics, medical devices and many other circuits.
The specific data is subject to PDF, and the above content is for reference
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