JANTX2N3634UB Allicdata Electronics
Allicdata Part #:

1086-20866-ND

Manufacturer Part#:

JANTX2N3634UB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 140V 1A
More Detail: Bipolar (BJT) Transistor PNP 140V 1A 1W Surface M...
DataSheet: JANTX2N3634UB datasheetJANTX2N3634UB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/357
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-SMD
Description

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A bipolar junction transistor (BJT) is an active semiconductor semiconductor device that controls current flow between two terminals by utilizing the current that flows between the base and emitter. The JANTX2N3634UB is a NPN SiGe bipolar transistor commonly used in industrial and scientific applications due to its high current gain, high frequency response, and low noise levels. It is classified as a single BJT.

The JANTX2N3634UB is particularly useful in electronic crosspoint switches and high frequency amplifiers. Its maximum current gain is 15 and its maximum voltage rating is 45V. Its maximum power dissipation is 1W, with a maximum operating temperature of 150°C. Its peak current rating is 500mA, with a base-emitter voltage (VBE) of -4V. As a PNP transistor, it is able to switch a current from its collector to its emitter. The collector is connected to the positive supply and the emitter to the output load.

The working principle of the JANTX2N3634UB is the same as any other bipolar junction transistor. When a small base current is applied to the base-emitter junction, a large current is allowed to flow between the collector and emitter, thus amplifying the current between them. The greater the base current, the larger the collector current. The amplification (or gain) of this current is known as the beta (β) value and is given by the ratio of the collector current to the base current. Generally, the higher the beta, the higher the gain.

The JANTX2N3634UB has a high frequency response due to its low capacitance between the collector and emitter. This minimizes the effect of any stray capacitance and enables the transistor to switch quickly, making it ideal for high frequency applications. Additionally, it has low noise levels, making it suitable for sensitive applications.

The JANTX2N3634UB is a versatile and reliable transistor that can be used in a wide range of applications including electronic crosspoint switches, high frequency amplifiers, power supplies, and other similar high frequency and low noise applications. Due to its excellent performance characteristics, the JANTX2N3634UB provides high reliability and is the perfect choice for applications that require a large current gain, high frequency response, and low noise levels.

The specific data is subject to PDF, and the above content is for reference

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