JANTX2N3636UB

Series:	Military, MIL-PRF-19500/357
Packaging:	Bulk
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	175V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 50mA, 10V
Power - Max:	1.5W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-SMD, No Lead
Supplier Device Package:	3-SMD

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JANTX2N3636UB Application Field And Working Principle

The JANTX2N3636UB, a type of NPN single silicon transistor, is typically used in a variety of power switching and amplification applications. It is commonly used in the field of audio amplifiers, switching supplies, MOSFET and bi-directional motor drives where its NPN configuration allows for the accurate amplification of low-level signals. Furthermore, the device is also ideal for use in power applications where efficient power transfer is needed. The main components of the JANTX2N3636UB are the collector, the base, and the emitter. The collector is the main terminal of the device and is connected to the device\'s power source. The base is the controlling element of the device and is connected to an input signal source. The emitter is the main output for the device and is connected to the load. The working principle of the JANTX2N3636UB transistor starts with the connection of the base to the input signal source. As the current conducted to the base increases, the collector to emitter path (the active region of the device) also begins to conduct electricity. This creates a current “pathway” from the collector to the emitter, allowing a greater current flow to be conducted. The current flow will ultimately be determined in part by the resistance of the load being connected to the emitter. The emitter voltage at any given point on the collector-emitter path will depend largely on the load resistance. In this way, the device functions as an amplifier, allowing the input signal to control the amount of current flow in the device.The JANTX2N3636UB can also be used in switching applications, where it will rapidly turn the collector-emitter path “on” and “off.” This allows the device to switch rapidly between two states, allowing for more efficient power transfer. Typically, this kind of device is used in applications such as high speed switching and pulse control. In addition to its typical switching and amplification applications, the JANTX2N3636UB also offers other features that make it an ideal choice for use in particular applications. One of these is its relatively high voltage rating. The device can handle up to 200 volts, making it ideal for use in high voltage applications. Furthermore, the device also offers a relatively low current leakage rate, which can be beneficial in applications where power dissipation needs to be minimized. The JANTX2N3636UB is also well-suited for use in MOSFET and bi-directional motor drives. Its NPN configuration allows for accurate amplification of low-level signals, and its high voltage rating makes it ideal for use in power applications where efficient power transfer is needed. In addition, its relatively low current leakage rate ensures that power dissipation can be minimized. With these attributes, the JANTX2N3636UB is well-suited for use in a wide range of applications in the electronics industry.

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