Allicdata Part #: | 1657-1161-ND |
Manufacturer Part#: |
JANTX2N3716 |
Price: | $ 37.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | DIODE |
More Detail: | Bipolar (BJT) Transistor NPN 80V 10A 5W Through H... |
DataSheet: | JANTX2N3716 Datasheet/PDF |
Quantity: | 359 |
1 +: | $ 34.33500 |
10 +: | $ 32.31270 |
100 +: | $ 28.87970 |
Series: | Military, MIL-PRF-19500/408 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 2A, 10A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 3A, 2V |
Power - Max: | 5W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-204AA (TO-3) |
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The JANTX2N3716 is a high-performance and low-power-consumption N-channel MOSFET transistor designed specifically for a wide range of applications. It has a dynamic on-resistance of 0.020 ohm and is designed to provide excellent performance under a wide range of conditions. The device also offers a low gate capacitance of 7.2 pF and an input gate threshold voltage of 2.8 V. This makes it suitable for a variety of applications, such as RF power amplifiers, RF power oscillators, and RF oscillators.
The JANTX2N3716 is a P-channel enhancement-mode power MOSFET. It has an internal source-drain diode, which allows it to be used as a dual-borrow switch. The device is able to switch between different voltage levels by controlling the gate voltage. This feature makes the JANTX2N3716 suitable for a variety of applications, such as motor control, power supplies, and automotive applications.
The device operates in two states. At low current, the JANTX2N3716 acts as an open switch with the gate Vth (gate threshold voltage) setting the On resistance. At high current, the device acts as a closed switch with the On resistance becoming lower. This is due to the avalanche breakdown voltage of the JANTX2N3716, which is lower than the normal breakdown voltage. This will also cause the On resistance to decrease at higher di/dt (pulling current).
The JANTX2N3716 can also be used to create cascode configurations. By providing an increased input capacitance, the JANTX2N3716 can provide better frequency response, high linearity, and improved lifetime. This is due to the reverse-source-drain biasing effect, which is created by connecting a resistor between the gate and source. This setup allows the device to be operated in a higher gain state and will increase the speed of the device.
The JANTX2N3716 can also be used as an output buffer, as it has a high current drive capability. This is useful for driving high power loads, such as motors and speakers. By connecting an external P-channel MOSFET, the JANTX2N3716 can also be used for controlling the voltage across the load, thus enabling the device to regulate the current and the associated power consumption.
In summary, the JANTX2N3716 is a high-performance and low-power-consumption N-channel MOSFET transistor designed for various applications. It features a dynamic on-resistance of 0.020 ohm, a low gate capacitance of 7.2 pF, and a reverse-source-drain biasing effect. This makes it suitable for creating cascode configurations, output buffers, and motor and power supplies. It also provides excellent frequency response, high linearity and increased lifetime.
The specific data is subject to PDF, and the above content is for reference
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