Allicdata Part #: | 1086-20942-ND |
Manufacturer Part#: |
JANTX2N3960UB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 12V UB |
More Detail: | Bipolar (BJT) Transistor NPN 12V 400mW Surface M... |
DataSheet: | JANTX2N3960UB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/399 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 3mA, 30mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 10mA, 1V |
Power - Max: | 400mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | UB |
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JANTX2N3960UB is a silicon NPN transistor suitable for use in a wide range of applications, including general-purpose switching, amplifier, computers, and data transmission applications. It is a single-type bipolar junction transistor (BJT). The JANTX2N3960UB features an alloyed three-layer semiconductor junction which is designed to provide excellent performance, good operating temperature range, and low power dissipation.
General Overview
The JANTX2N3960UB is designed for general-purpose switching and amplifier applications, with a DC current capability of 60mA, a collector-emitter breakdown voltage of 40 volts, and a junction temperature of +175 °C. The collector-base breakdown voltage of this device is about 1kV. It has a low power dissipation of 1.7V at a collector current of 60mA.
Applications and Use
JANTX2N3960UB is ideally suited for use in general-purpose switching and amplifier applications. It can be used to switch high-current DC loads (up to 60mA) with low voltage drop, and can easily switch DC signals with a low voltage signal. It can also be used in data transmission applications, such as in switching RF signals, and as a linear amplifier.
In addition, the JANTX2N3960UB can be used in signal amplification and signal detection circuits, such as detectors for small-signal applications. It can also be used in pulse-width modulation circuits and constant current devices.
Working Principle
The JANTX2N3960UB is a single type, NPN bipolar junction transistor, which works by controlling the current flow between the collector and the emitter. It is a three-terminal device, with one base terminal and two emitter and collector terminals. When a voltage is applied to the base terminal, it creates a small current between the emitter and the collector, due to the flow of electrons from the emitter to the collector. This allows current to flow from the collector to the emitter, thus switching a load.
The transistor has a ratings limit, where it should not be used to supply a voltage above its voltage rating, or a current above its current rating. When this voltage is exceeded, the transistor will either degrade, or burn out, and must be replaced.
Safety and Protection
When using JANTX2N3960UB, it is important to follow safety and protection guidelines, to ensure that the device is used correctly, and not damaged. It is important to operate the transistor within the voltage and current ratings to reduce the risks of damage, and to use proper voltage protection devices, including an overvoltage protection circuit, if needed, to prevent the transistor from going into thermal runaway.
The specific data is subject to PDF, and the above content is for reference
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