Allicdata Part #: | 1086-20983-ND |
Manufacturer Part#: |
JANTX2N4261UB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 15V 0.03A |
More Detail: | Bipolar (BJT) Transistor PNP 15V 30mA 200mW Surfa... |
DataSheet: | JANTX2N4261UB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/511 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 30mA |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Vce Saturation (Max) @ Ib, Ic: | 350mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 1V |
Power - Max: | 200mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | UB |
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Transistors - Bipolar (BJT) - Single
A JANTX2N4261UB device is a general-purpose NPN switching transistor manufactured by Microsemi Corporation. It is available in a TO-92 package with an operating temperature range of -55°C to +125°C. The device is suitable for small-signal amplifiers, analog switches, oscillators, and time delay circuits.
Application Field
JANTX2N4261UB is particularly useful when used as a switch due to its low VCE (cut-off) and high VOE (saturation) voltages. This transistor can handle currents up to 200mA and is thus ideal for switching high-current devices such as motors and solenoids. Its wide operating temperature range makes it a suitable component for automotive applications. It is also used in low-noise amplifier applications and the construction of amplified antennas.
Working Principle
The JANTX2N4261UB is a bipolar NPN transistor which operates by controlling the flow of current from the collector to the emitter. It is composed of three layers of semiconductors, one of which is a P-type and the other two are N-type. As the voltage at the base terminal of the device is increased, the current flow from the collector to the emitter increases and the transistor is said to be “saturated”. Conversely, when the voltage at the base terminal decreases, the current flow from the collector to the emitter is reduced and the transistor is said to be “off”.
The device has an Hfe (current gain) of 75 at a collector current of 10mA and an input resistance of 1.2K Ohms. In addition, its maximum collector-emitter voltage (VCE(max)) is 200V and its maximum emitter-base voltage (VEB(max)) is 6V. The JANTX2N4261UB is capable of carrying currents up to 200mA and can handle power dissipation up to 300mW.
The JANTX2N4261UB has an excellent gain and collector current-handling characteristics and is specially designed for sub-circuit applications like audio amplifiers, video circuits, switching and interface circuits. Due to its stability, performance and reliability, this device is suitable for use in demanding automotive electronics applications.
In conclusion, the JANTX2N4261UB is a general-purpose NPN switching transistor that is suitable for a variety of applications ranging from small-signal amplifiers to oscillators, time delay circuits and switching high-current devices. Its low VCE and high VOE make it particularly useful when used as a switch. It has an Hfe of 75, an input resistance of 1.2K Ohms and is capable of handling current up to 200mA.
The specific data is subject to PDF, and the above content is for reference
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